FDMS3604AS ,30V Dual N-Channel PowerTrench?MOSFETElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Type M ..
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FDMS3662 ,100V N-Channel PowerTrench?MOSFETGeneral Description Max r = 14.8m: at V = 10V, I = 8.9A This N-Channel MOSFET is produced usin ..
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FDMS3604AS
30V Dual N-Channel PowerTrench?MOSFET
® FDMS3604AS PowerTrench Power Stage September 2011 FDMS3604AS ® PowerTrench Power Stage 30 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max r = 8 mΩ at V = 10 V, I = 13 A DS(on) GS D connected to enable easy placement and routing of synchronous Max r = 11 mΩ at V = 4.5 V, I = 11 A DS(on) GS D buck converters. The control MOSFET (Q1) and synchronous Q2: N-Channel SyncFET (Q2) have been designed to provide optimal power Max r = 2.6 mΩ at V = 10 V, I = 23 A DS(on) GS D efficiency. Max r = 3.5 mΩ at V = 4.5 V, I = 21 A DS(on) GS D Applications Low inductance packaging shortens rise/fall times, resulting in lower switching losses Computing MOSFET integration enables optimum layout for lower circuit Communications inductance and reduced switch node ringing General Purpose Point of Load RoHS Compliant Notebook VCORE Sever G1 D1 D1 D1 Q 2 S2 D1 D1 5 4 PHASE PHASE D1 S2 6 3 (S1/D2) S2 D1 7 2 G2 S2 G2 S2 G1 8 1 S2 Q 1 Top Bottom Power 56 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 30 30 V DS V Gate to Source Voltage (Note 3) ±20 ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 30 40 C -Continuous (Silicon limited) T = 25 °C 60 130 C I A D 1a 1b -Continuous T = 25 °C 13 23 A -Pulsed 40 100 4 5 E Single Pulse Avalanche Energy 40 112 mJ AS 1a 1b Power Dissipation for Single Operation T = 25 °C 2.2 2.5 A P W D 1c 1d Power Dissipation for Single Operation T = 25 °C 1.0 1.0 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics 1a 1b R Thermal Resistance, Junction to Ambient 57 50 θJA 1c 1d R Thermal Resistance, Junction to Ambient 125 120 °C/W θJA R Thermal Resistance, Junction to Case 3.5 2 θJC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 22CA FDMS3604AS Power 56 13 ” 12 mm 3000 units N7CC 1 ©2011 FDMS3604AS Rev.C4
