FDMS3572 ,80V N-Channel UltraFET Trench MOSFETGeneral Description Max r = 16.5mΩ at V = 10V, I = 8.8AUItraFET devices combine characteristics th ..
FDMS3572 ,80V N-Channel UltraFET Trench MOSFETapplications. Max r = 24mΩ at V = 6V, I = 8.4ADS(on) GS DOptimized for r , low ESR, low total and ..
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FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
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FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
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FDMS3572
80V N-Channel UltraFET Trench MOSFET
® FDMS3572 N-Channel UltraFET Trench MOSFET February 2007 FDMS3572 tm ® N-Channel UltraFET Trench MOSFET 80V, 22A, 16.5mΩ Features General Description Max r = 16.5mΩ at V = 10V, I = 8.8A UItraFET devices combine characteristics that enable DS(on) GS D benchmark efficiency in power conversion applications. Max r = 24mΩ at V = 6V, I = 8.4A DS(on) GS D Optimized for r , low ESR, low total and Miller gate charge, DS(on) Typ Qg = 28nC at V = 10V these devices are ideal for high frequency DC to DC converters. GS Low Miller Charge Application Optimized efficiency at high frequencies DC - DC Conversion RoHS Compliant S S S G Pin 1 D G 5 4 D S 6 3 S D 7 2 D 8 1 S D D D D Power 56 (Bottom view) MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 80 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 22 C -Continuous (Silicon limited) T = 25°C 48 C I A D -Continuous T = 25°C (Note 1a) 8.8 A -Pulsed 50 Power Dissipation T = 25°C 78 C P W D Power Dissipation T = 25°C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.6 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS3572 FDMS3572 Power 56 13’’ 12mm 3000 units 1 ©2007 FDMS3572 Rev.C1
