FDMS2672 ,200V N-Channel UltraFET Trench?MOSFETGeneral Description Max r = 77m at V = 10V, I = 3.7AUItraFET devices combine characteristics that ..
FDMS2734 ,250V N-Channel UltraFET Trench MOSFETapplications. Max r = 130m at V = 6V, I = 1.7ADS(on) GS DOptimized for r , low ESR, low total ..
FDMS3500 ,75V N-Channel PowerTrench?MOSFETGeneral Description Max r = 14.5m: at V = 10V, I = 11.5A This N-Channel MOSFET is produced usi ..
FDMS3572 ,80V N-Channel UltraFET Trench MOSFETGeneral Description Max r = 16.5mΩ at V = 10V, I = 8.8AUItraFET devices combine characteristics th ..
FDMS3572 ,80V N-Channel UltraFET Trench MOSFETapplications. Max r = 24mΩ at V = 6V, I = 8.4ADS(on) GS DOptimized for r , low ESR, low total and ..
FDMS3600S ,25 V Asymmetric Dual N-Channel MOSFET PowerTrench?Power StageElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Type M ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMS2672
200V N-Channel UltraFET Trench?MOSFET
FDMS2672 N-Channel UltraFET Trench MOSFET April 2012 FDMS2672 tm N-Channel UltraFET Trench MOSFET� 200V, 20A, 77m� Features General Description � Max r = 77m� at V = 10V, I = 3.7A UItraFET devices combine characteristics that enable DS(on) GS D benchmark efficiency in power conversion applications. � Max r = 88m� at V = 6V, I = 3.5A DS(on) GS D Optimized for r , low ESR, low total and Miller gate charge, DS(on) � Low Miller Charge these devices are ideal for high frequency DC to DC converters. � RoHS Compliant Application � DC - DC Conversion S S S G Pin 1 D 5 4 G S D 6 3 7 2 S D D 8 1 S D D D D Power 56 (Bottom view) MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 200 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Silicon limited) T = 25°C 20 C I -Continuous T = 25°C (Note 1a) 3.7 A D A -Pulsed 20 E Single Pulse Avalanche Energy (Note 3) 33.8 mJ AS Power Dissipation T = 25°C 78 C P W D Power Dissipation T = 25°C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.6 �JC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 �JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS2672 FDMS2672 Power 56 13’’ 12mm 3000 units 1 ©2012 FDMS2672 Rev.C1
