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|FDMS2572 ,150V N-Channel UltraFET Trench MOSFETGeneral Description Max r = 47mΩ at V = 10V, I = 4.5AUItraFET devices combine characteristics that ..|
FDMS2672 ,200V N-Channel UltraFET Trench?MOSFETGeneral Description Max r = 77m at V = 10V, I = 3.7AUItraFET devices combine characteristics that ..
FDMS2734 ,250V N-Channel UltraFET Trench MOSFETapplications. Max r = 130m at V = 6V, I = 1.7ADS(on) GS DOptimized for r , low ESR, low total ..
FDMS3500 ,75V N-Channel PowerTrench?MOSFETGeneral Description Max r = 14.5m: at V = 10V, I = 11.5A This N-Channel MOSFET is produced usi ..
FDMS3572 ,80V N-Channel UltraFET Trench MOSFETGeneral Description Max r = 16.5mΩ at V = 10V, I = 8.8AUItraFET devices combine characteristics th ..
FDMS3572 ,80V N-Channel UltraFET Trench MOSFETapplications. Max r = 24mΩ at V = 6V, I = 8.4ADS(on) GS DOptimized for r , low ESR, low total and ..
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FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
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|150V N-Channel UltraFET Trench MOSFET|
® FDMS2572 N-Channel UltraFET Trench MOSFET December 2012 FDMS2572 ® N-Channel UltraFET Trench MOSFET 150V, 27A, 47mΩ Features General Description Max r = 47mΩ at V = 10V, I = 4.5A UItraFET devices combine characteristics that enable DS(on) GS D benchmark efficiency in power conversion applications. Max r = 53mΩ at V = 6V, I = 4.5A DS(on) GS D Optimized for r , low ESR, low total and Miller gate charge, DS(on) Low Miller Charge these devices are ideal for high frequency DC to DC converters. Optimized efficiency at high frequencies Application UIS Capability (Single pulse and Repetitive pulse) Distributed Power Architectures and VRMs RoHS Compliant Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier S S S G Pin 1 D G 5 4 S D 6 3 7 2 S D D 8 1 S D D D D Power 56 (Bottom view) MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 150 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 27 C -Continuous (Silicon limited) T = 25°C 27 A C I D -Continuous T = 25°C (Note 1a) 4.5 A -Pulsed 30 E Single Pulse Avalanche Energy (Note 3) 150 mJ AS Power Dissipation T = 25°C 78 C P W D Power Dissipation T = 25°C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.6 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS2572 FDMS2572 Power 56 13’’ 12mm 3000 units 1 ©2012 FDMS2572 Rev.C4