FDMQ86530L ,60V N-Channel PowerTrench?MOSFET, GreenBridge?Series of High-Efficiency Bridge RectifiersApplications RoHS Compliant Active bridge Diode Bridge replacement in 24V & 48V AC systemsTop Bo ..
FDMS0306AS Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters 100% UIL test ..
FDMS0308AS Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters 100% UIL test ..
FDMS0308AS General DescriptionThe FDMS0308AS has been designed to minimize losses in Max r = 2.8 mΩ at V = ..
FDMS0308AS ®TMFDMS0308AS N-Channel PowerTrench SyncFETJuly 2010FDMS0308AS ..
FDMS0308CS , FDMS0308CS N-Channel PowerTrench® SyncFETTM 30 V, 42 A, 3 m
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMQ86530L
60V N-Channel PowerTrench?MOSFET, GreenBridge?Series of High-Efficiency Bridge Rectifiers
® FDMQ86530L Quad N-Channel PowerTrench MOSFET April 2013 FDMQ86530L TM GreenBridge Series of High-Efficiency Bridge Rectifiers ® N-Channel PowerTrench MOSFET 60 V, 8 A, 17.5 mΩ Features General Description This Quad MOSFET solution provides ten-fold improvement in Max r = 17.5 mΩ at V = 10 V, I = 8 A DS(on) GS D power dissipation over diode bridge. Max r = 23 mΩ at V = 6 V, I = 7 A DS(on) GS D Max r = 25 mΩ at V = 4.5 V, I = 6.5 A DS(on) GS D Substantial efficiency benefit in PD solutions Applications RoHS Compliant Active bridge Diode Bridge replacement in 24V & 48V AC systems Top Bottom G1 G4 Pin 1 G4 G1 D1/D4 D1/D4 D1/D4 D1/D4 D1/D4 D3/S4 Q1 Q4 S1/D2 S1/D2 D3/S4 G3 G2 D3/ S1/ G2 G3 S3 S4 D2 S2 S3 S2 S2 S3 Q2 Q3 S2 S3 MLP 4.5x5 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous T = 25 °C 8 C I -Continuous T = 25 °C (Note 1a) 8 A D A -Pulsed 50 Power Dissipation T = 25 °C 22 C P W D Power Dissipation T = 25 °C (Note 1a) 1.9 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 65 θJA °C/W R Thermal Resistance, Junction to Ambient (Note 1b) 135 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMQ86530L FDMQ86530L MLP 4.5x5 13 ’’ 12 mm 3000 units ©2012 1 FDMQ86530L Rev. C1
