FDMQ8403 ,100V N-Channel PowerTrench?MOSFET GreenBridge?Series of High-Efficiency Bridge RectifiersGeneral DescriptionThis quad MOSFET solution provides ten-fold improvement in Max r = 110 mΩ at V ..
FDMQ86530L ,60V N-Channel PowerTrench?MOSFET, GreenBridge?Series of High-Efficiency Bridge RectifiersApplications RoHS Compliant Active bridge Diode Bridge replacement in 24V & 48V AC systemsTop Bo ..
FDMS0306AS Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters 100% UIL test ..
FDMS0308AS Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters 100% UIL test ..
FDMS0308AS General DescriptionThe FDMS0308AS has been designed to minimize losses in Max r = 2.8 mΩ at V = ..
FDMS0308AS ®TMFDMS0308AS N-Channel PowerTrench SyncFETJuly 2010FDMS0308AS ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMQ8403
100V N-Channel PowerTrench?MOSFET GreenBridge?Series of High-Efficiency Bridge Rectifiers
® FDMQ8403 N-Channel PowerTrench MOSFET July 2012 FDMQ8403 TM GreenBridge Series of High-Efficiency Bridge Rectifiers ® N-Channel PowerTrench MOSFET 100 V, 6 A, 110 mΩ Features General Description This quad MOSFET solution provides ten-fold improvement in Max r = 110 mΩ at V = 10 V, I = 3 A DS(on) GS D power dissipation over diode bridge. Max r = 175 mΩ at V = 6 V, I = 2.4 A DS(on) GS D Substantial efficiency benefit in PD solutions RoHS Compliant Application High-Efficiency Bridge Rectifiers Top Bottom S3 7 6 S2 Pin 1 Q3 Q2 G4 G1 S3 8 5 S2 D1/D4 D1/D4 D1/D4 G3 9 4 G2 D3/S4 S1/D2 G3 G2 D3/ S1/ 10 3 S1/D2 D3/S4 Q4 Q1 S3 S4 D2 S2 11 2 D1/D4 D1/D4 S3 S2 G4 12 1 G1 MLP 4.5x5 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 6 C -Continuous (Silicon limited) T = 25 °C 9 C I A D -Continuous T = 25 °C (Note 1a) 3.1 A -Pulsed 12 Power Dissipation T = 25 °C 17 C P W D Power Dissipation T = 25 °C (Note 1a) 1.9 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 65 θJA °C/W R Thermal Resistance, Junction to Ambient (Note 1b) 135 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMQ8403 FDMQ8403 MLP 4.5x5 13 ’’ 12 mm 3000 units 1 ©2012 FDMQ8403 Rev.C2
