FDMJ1023PZ ,-20V Dual P-Channel PowerTrench?MOSFETapplicationS1 S2 G2Pin 1 Bottom Drain Contact Q2G2S24 3 D1D2S2S12 5 Q1G1 S11 6 S1 S2G1Bottom Drain ..
FDML7610S ,30V Asymmetric Dual N-Channel MOSFET PowerTrench?Power StageElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Type M ..
FDMQ8203 ,100V Dual N-Channel and Dual P-Channel PowerTrench?MOSFET, GreenBridge?Series of High-Efficiency Bridge RectifiersElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Type M ..
FDMQ8403 ,100V N-Channel PowerTrench?MOSFET GreenBridge?Series of High-Efficiency Bridge RectifiersGeneral DescriptionThis quad MOSFET solution provides ten-fold improvement in Max r = 110 mΩ at V ..
FDMQ86530L ,60V N-Channel PowerTrench?MOSFET, GreenBridge?Series of High-Efficiency Bridge RectifiersApplications RoHS Compliant Active bridge Diode Bridge replacement in 24V & 48V AC systemsTop Bo ..
FDMS0306AS Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters 100% UIL test ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMJ1023PZ
-20V Dual P-Channel PowerTrench?MOSFET
® FDMJ1023PZ Dual P-Channel PowerTrench MOSFET August 2007 FDMJ1023PZ tm ® Dual P-Channel PowerTrench MOSFET –20V, –2.9A, 112mΩ Features General Description Max r = 112mΩ at V = –4.5V, I = –2.9A This dual P-Channel MOSFET uses Fairchild’s advanced low DS(on) GS D ® voltage PowerTrench process. This device is designed Max r = 160mΩ at V = –2.5V, I = –2.4A DS(on) GS D specifically as a single package solution for the battery charge Max r = 210mΩ at V = –1.8V, I = –2.1A switch in cellular handset and other ultra-portable applications. It DS(on) GS D features two independent P-Channel MOSFETs with low Max r = 300mΩ at V = –1.5V, I = –1.0A DS(on) GS D on-state resistance for minimum conduction losses. When Low gate charge, high power and current handling capability connected in the typical common source configuration, bi-directional current flow is possible. The SC-75 MicroFET HBM ESD protection level > 1.5kV typical (Note 3) package offers exceptional thermal performance for its physical RoHS Compliant size and is well suited to linear mode applications. Applications Battery management/charger application S1 S2 G2 Pin 1 Bottom Drain Contact Q2 G2 S2 4 3 D1 D2 S2 S1 2 5 Q1 G1 S1 1 6 S1 S2 G1 Bottom Drain Contact SC-75 MicroFET MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage –20 V DS V Gate to Source Voltage ±8 V GS Drain Current -Continuous (Note 1a) –2.9 I A D -Pulsed –12 Power Dissipation (Note 1a) 1.4 P W D Power Dissipation (Note 1b) 0.7 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 89 θJA °C/W R Thermal Resistance, Junction to Ambient (Note 1b) 182 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 023 FDMJ1023PZ SC-75 MicroFET 7’’ 8mm 3000 units 1 ©2007 FDMJ1023PZ Rev.B
