FDME1034CZT ,20V Complementary PowerTrench?MOSFETElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Type M ..
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FDME1034CZT
20V Complementary PowerTrench?MOSFET
® FDME1034CZT Complementary PowerTrench MOSFET July 2010 FDME1034CZT ® Complementary PowerTrench MOSFET N-channel: 20 V, 3.8 A, 66 mΩ P-channel: -20 V, -2.6 A, 142 mΩ Features General Description This device is designed specifically as a single package solution Q1: N-Channel for a DC/DC ‘Switching’ MOSFET in cellular handset and other Max r = 66 mΩ at V = 4.5 V, I = 3.4 A DS(on) GS D ultra-portable applications. It features an independent Max r = 86 mΩ at V = 2.5 V, I = 2.9 A DS(on) GS D N-Channel & P-Channel MOSFET with low on-state resistance Max r = 113 mΩ at V = 1.8 V, I = 2.5 A DS(on) GS D for minimum conduction losses. The gate charge of each Max r = 160 mΩ at V = 1.5 V, I = 2.1 A DS(on) GS D MOSFET is also minimized to allow high frequency switching Q2: P-Channel directly from the controlling device. Max r = 142 mΩ at V = -4.5 V, I = -2.3 A DS(on) GS D The MicroFET 1.6x1.6 Thin package offers exceptional thermal Max r = 213 mΩ at V = -2.5 V, I = -1.8 A DS(on) GS D performance for it's physical size and is well suited to switching Max r = 331 mΩ at V = -1.8 V, I = -1.5 A DS(on) GS D and linear mode applications. Max r = 530 mΩ at V = -1.5 V, I = -1.2 A DS(on) GS D Low profile: 0.55 mm maximum in the new package Applications MicroFET 1.6x1.6 Thin DC-DC Conversion Free from halogenated compounds and antimony Level Shifted Load Switch oxides HBM ESD protection level > 1600 V (Note 3) RoHS Compliant D2 G1 S1 D2 Pin 1 D1 S2 G2 D1 TOP BOTTOM MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 20 -20 V DS V Gate to Source Voltage ±8 ±8 V GS Drain Current -Continuous T = 25 °C (Note 1a) 3.8 -2.6 A I A D -Pulsed 6 -6 Power Dissipation for Single Operation T = 25 °C (Note 1a) 1.4 A P W D Power Dissipation for Single Operation T = 25 °C (Note 1b) 0.6 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a) 90 θJA °C/W R Thermal Resistance, Junction to Ambient (Single Operation) (Note 1b) 195 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 5T FDME1034CZT MicroFET 1.6x1.6 Thin 7 ’’ 8 mm 5000 units ©2010 1 FDME1034CZT Rev.C1
