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FDMC8882
30V N-Channel Power Trench?MOSFET
® FDMC8882 N-Channel Power Trench MOSFET September 2010 FDMC8882 ® � N-Channel Power Trench MOSFET 30 V, 16 A, 14.3 m� Features General Description � Max r = 14.3 m� at V = 10 V, I = 10.5 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D ® Semiconductor’s advanced Power Trench process that has � Max r = 22.5 m� at V = 4.5 V, I = 8.3 A DS(on) GS D been especially tailored to minimize the on-state resistance. This � High performance technology for extremely low r device is well suited for Power Management and load switching DS(on) applications common in Notebook Computers and Portable � Termination is Lead-free and RoHS Compliant Battery Packs. Application � High side in DC - DC Buck Converters � Notebook battery power management � Load switch in Notebook Bottom Top Pin 1 G D 5 4 G S S S D 6 3 S D 7 S 2 D D D S D 8 1 D MLP 3.3x3.3 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 16 C -Continuous (Silicon limited) T = 25 °C 34 C I A D -Continuous T = 25 °C (Note 1a) 10.5 A -Pulsed 40 Power Dissipation T = 25 °C 18 C P W D Power Dissipation T = 25 °C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 6.6 �JC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 �JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC8882 FDMC8882 MLP 3.3x3.3 13 ’’ 12 mm 3000 units ©2010 1 FDMC8882 Rev.C2
