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|FDMC8878 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 14m at V = 10V, I = 9.6AThis N-Channel MOSFET is a rugged gate ..|
FDMC8882 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 14.3 m at V = 10 V, I = 10.5 A This N-Channel MOSFET is produced u ..
FDMC8884 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 19 mΩ at V = 10 V, I = 9.0 A This N-Channel MOSFET is produced usin ..
FDME1034CZT ,20V Complementary PowerTrench?MOSFETElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Type M ..
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|30V N-Channel Power Trench?MOSFET|
® FDMC8878 N-Channel Power Trench MOSFET July 2012 FDMC8878 ® N-Channel Power Trench MOSFET� 30V, 16.5A, 14m� Features General Description � Max r = 14m� at V = 10V, I = 9.6A This N-Channel MOSFET is a rugged gate version of DS(on) GS D Fairchild Semiconductor‘s advanced Power Trench � Max r = 17m� at V = 4.5V, I = 8.7A DS(on) GS D process. It has been optimized for power management � Low Profile - 0.8 mm max in MLP 3.3X3.3 applications. � RoHS Compliant Application � DC - DC Conversion Bottom Top D D D D 8 6 5 7 G D 5 4 D S 6 3 D 7 2 S G S S D S S 8 1 1 2 3 4 Pin 1 MLP 3.3x3.3 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 16.5 C -Continuous (Silicon limited) T = 25°C 38 C I A D -Continuous T = 25°C (Note 1a) 9.6 A -Pulsed 60 Power Dissipation T = 25°C 31 C P W D Power Dissipation T = 25°C (Note 1a) 2.1 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 4 �JC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 60 �JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC8878 FDMC8878 MLP 3.3X3.3 13 ” 12 mm 3000 units 1 ©2012 FDMC8878 Rev.D4