FDMC8854 ,30V N-Channel Power Trench?MOSFETapplications. RoHS Compliant Application DC - DC ConversionBottomTop8D5 47D6D5D6 37 21G2S3 8 14 S ..
FDMC8854 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 5.7mΩ at V = 10V, I = 15AThis N-Channel MOSFET is a rugged gate ..
FDMC8878 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 14m at V = 10V, I = 9.6AThis N-Channel MOSFET is a rugged gate ..
FDMC8882 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 14.3 m at V = 10 V, I = 10.5 A This N-Channel MOSFET is produced u ..
FDMC8884 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 19 mΩ at V = 10 V, I = 9.0 A This N-Channel MOSFET is produced usin ..
FDME1034CZT ,20V Complementary PowerTrench?MOSFETElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Type M ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMC8854
30V N-Channel Power Trench?MOSFET
® FDMC8854 N-Channel PowerTrench MOSFET February 2007 FDMC8854 tm ® N-Channel Power Trench MOSFET 30V, 15A, 5.7mΩ Features General Description Max r = 5.7mΩ at V = 10V, I = 15A This N-Channel MOSFET is a rugged gate version of DS(on) GS D Fairchild Semiconductor‘s advanced Power Trench Max r = 7.6mΩ at V = 4.5V, I = 13A DS(on) GS D process. It has been optimized for power management Low Profile - 1mm max in Power 33 applications. RoHS Compliant Application DC - DC Conversion Bottom Top 8 D 5 4 7 D 6 D 5 D 6 3 7 2 1 G 2 S 3 8 1 4 S S Power 33 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 15 C -Continuous (Silicon limited) T = 25°C 67 C I A D -Continuous T = 25°C (Note 1a) 15 A -Pulsed 30 Power Dissipation T = 25°C 41 C P W D Power Dissipation T = 25°C (Note 1a) 2.0 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 60 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC8854 FDMC8854 Power 33 7’’ 8mm 3000 units 1 ©2007 FDMC8854 Rev.C
