FDMC8678S Applications RoHS CompliantSynchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low sid ..
FDMC8854 ,30V N-Channel Power Trench?MOSFETapplications. RoHS Compliant Application DC - DC ConversionBottomTop8D5 47D6D5D6 37 21G2S3 8 14 S ..
FDMC8854 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 5.7mΩ at V = 10V, I = 15AThis N-Channel MOSFET is a rugged gate ..
FDMC8878 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 14m at V = 10V, I = 9.6AThis N-Channel MOSFET is a rugged gate ..
FDMC8882 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 14.3 m at V = 10 V, I = 10.5 A This N-Channel MOSFET is produced u ..
FDMC8884 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 19 mΩ at V = 10 V, I = 9.0 A This N-Channel MOSFET is produced usin ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMC8678S
® TM FDMC8678S N-Channel Power Trench SyncFET July 2009 FDMC8678S tm ® TM N-Channel Power Trench SyncFET 30V, 18A, 5.2mΩ Features General Description Max r = 5.2mΩ at V = 10V, I = 15A The FDMC8678S has been designed to minimize losses in DS(on) GS D power conversion applications. Advancements in both silicon Max r = 8.7mΩ at V = 4.5V, I = 12A DS(on) GS D and package technologies have been combined to offer the Advanced Package and Silicon combination for low r lowest r while maintaining excellent switching DS(on) DS(on) and high efficiency performance. This device has the added benefit of an efficient monolithic Schottky body diode. SyncFET Schottky Body Diode MSL1 robust package design Applications RoHS Compliant Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Pin 1 S S S D G 5 4 G D S 6 3 D D S 7 2 D D D D 8 1 S TOP BOTTOM Power 33 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 18 C -Continuous (Silicon limited) T = 25°C 66 C I A D -Continuous T = 25°C (Note 1a) 15 A -Pulsed 60 E Single Pulse Avalanche Energy (Note 3) 181 mJ AS Power Dissipation T = 25°C 41 C P W D Power Dissipation T = 25°C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 8678S FDMC8678S Power 33 13’’ 12 mm 3000 units 1 ©2009 FDMC8678S Rev.C1
