FDMC8676 ,30V N-Channel PowerTrench?MOSFETGeneral Description Max r = 5.9mΩ at V = 10V, I = 14.7A This device has been designed specifically ..
FDMC8676 ,30V N-Channel PowerTrench?MOSFETApplications High efficiency DC-DC converter Notebook DC-DC conversion Multi purpose point of lo ..
FDMC8678S Applications RoHS CompliantSynchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low sid ..
FDMC8854 ,30V N-Channel Power Trench?MOSFETapplications. RoHS Compliant Application DC - DC ConversionBottomTop8D5 47D6D5D6 37 21G2S3 8 14 S ..
FDMC8854 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 5.7mΩ at V = 10V, I = 15AThis N-Channel MOSFET is a rugged gate ..
FDMC8878 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 14m at V = 10V, I = 9.6AThis N-Channel MOSFET is a rugged gate ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMC8676
30V N-Channel PowerTrench?MOSFET
® FDMC8676 N-Channel PowerTrench MOSFET December 2007 FDMC8676 tm ® N-Channel PowerTrench MOSFET 30V, 18A, 5.9mΩ Features General Description Max r = 5.9mΩ at V = 10V, I = 14.7A This device has been designed specifically to improve the DS(on) GS D efficiency of DC/DC converters. Using new techniques in Max r = 9.3mΩ at V = 4.5V, I = 11.5A DS(on) GS D MOSFET construction, the various components of gate charge Low Profile - 1mm max in Power 33 and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable RoHS Compliant excellent performance with both adaptive and fixed dead time gate drive circuits. Very low r has been maintained to DS(on) provide an extremely versatile device. Applications High efficiency DC-DC converter Notebook DC-DC conversion Multi purpose point of load Top Bottom Pin 1 S D 5 4 G S S G D 6 S 3 D 7 2 S D D 8 1 S D D D Power 33 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 18 C -Continuous (Silicon limited) T = 25°C 66 C I A D -Continuous T = 25°C (Note 1a) 16 A -Pulsed 60 Power Dissipation T = 25°C 41 C P W D Power Dissipation T = 25°C (Note 1a) 2.3 A E Single Pulse Avalanche Energy (Note 3) 216 mJ AS T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC8676 FDMC8676 Power 33 13’’ 12mm 3000units 1 ©2007 FDMC8676 Rev.C
