FDMC8651 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 6.1 mΩ at V = 4.5 V, I = 15 A This device has been designed specifical ..
FDMC8651 ,30V N-Channel Power Trench?MOSFETApplications Synchronous rectifier 3.3 V input synchronous buck switchBottomTopPin 1S 4 GD 5SSGD ..
FDMC8676 ,30V N-Channel PowerTrench?MOSFETGeneral Description Max r = 5.9mΩ at V = 10V, I = 14.7A This device has been designed specifically ..
FDMC8676 ,30V N-Channel PowerTrench?MOSFETApplications High efficiency DC-DC converter Notebook DC-DC conversion Multi purpose point of lo ..
FDMC8678S Applications RoHS CompliantSynchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low sid ..
FDMC8854 ,30V N-Channel Power Trench?MOSFETapplications. RoHS Compliant Application DC - DC ConversionBottomTop8D5 47D6D5D6 37 21G2S3 8 14 S ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMC8651
30V N-Channel Power Trench?MOSFET
® FDMC8651 N-Channel Power Trench MOSFET July 2008 FDMC8651 ® N-Channel Power Trench MOSFET 30 V, 20 A, 6.1 mΩ Features General Description Max r = 6.1 mΩ at V = 4.5 V, I = 15 A This device has been designed specifically to improve the DS(on) GS D efficiency of DC/DC converters. Using new techniques in Max r = 9.3 mΩ at V = 2.5 V, I = 12 A DS(on) GS D MOSFET construction, the various components of gate charge Low Profile - 1 mm max in Power 33 and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable 100% UIL Tested excellent performance with both adaptive and fixed dead time RoHS Compliant gate drive circuits. Very low r has been maintained to DS(on) provide a sub logic-level device. Applications Synchronous rectifier 3.3 V input synchronous buck switch Bottom Top Pin 1 S 4 G D 5 S S G D 6 S 3 D 7 2 S D D 8 1 S D D D Power 33 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±12 V GS Drain Current -Continuous (Package limited) T = 25 °C 20 C -Continuous (Silicon limited) T = 25 °C 64 C I A D -Continuous T = 25 °C (Note 1a) 15 A -Pulsed 60 E Single Pulse Avalanche Energy (Note 3) 128 mJ AS Power Dissipation T = 25 °C 41 C P W D Power Dissipation T = 25 °C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC8651 FDMC8651 Power 33 13 ’’ 12 mm 3000 units 1 ©2008 FDMC8651 Rev.C
