FDMC86102 ,100V N-Channel Shielded Gate Power Trench?MOSFETGeneral Description Max r = 24 mΩ at V = 10 V, I = 7 A This N-Channel MOSFET is produced using ..
FDMC8651 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 6.1 mΩ at V = 4.5 V, I = 15 A This device has been designed specifical ..
FDMC8651 ,30V N-Channel Power Trench?MOSFETApplications Synchronous rectifier 3.3 V input synchronous buck switchBottomTopPin 1S 4 GD 5SSGD ..
FDMC8676 ,30V N-Channel PowerTrench?MOSFETGeneral Description Max r = 5.9mΩ at V = 10V, I = 14.7A This device has been designed specifically ..
FDMC8676 ,30V N-Channel PowerTrench?MOSFETApplications High efficiency DC-DC converter Notebook DC-DC conversion Multi purpose point of lo ..
FDMC8678S Applications RoHS CompliantSynchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low sid ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMC86102
100V N-Channel Shielded Gate Power Trench?MOSFET
® FDMC86102 N-Channel Power Trench MOSFET March 2012 FDMC86102 ® N-Channel Power Trench MOSFET 100 V, 20 A, 24 mΩ Features General Description Max r = 24 mΩ at V = 10 V, I = 7 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D ® Semiconductor‘s advanced Power Trench process that has Max r = 38 mΩ at V = 6 V, I = 5 A DS(on) GS D been especially tailored to minimize the on-state resistance and Low Profile - 1 mm max in Power 33 yet maintain superior switching performance. 100% UIL Tested RoHS Compliant Application DC - DC Conversion Bottom Top Pin 1 S D 5 4 G S S G D 6 3 S D 7 S 2 D D S D 8 1 D D Power 33 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 20 C -Continuous (Silicon limited) T = 25 °C 29 C I A D -Continuous T = 25 °C (Note 1a) 7 A -Pulsed 30 E Single Pulse Avalanche Energy (Note 3) 72 mJ AS Power Dissipation T = 25 °C 41 C P W D Power Dissipation T = 25 °C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC86102 FDMC86102 Power 33 13’’ 12 mm 3000 units 1 ©2012 FDMC86102 Rev.C1
