FDMC8296 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 8.0m at V = 10V, I = 12A This N-Channel MOSFET is produced using ..
FDMC8462 ,40V N-Channel Power Trench?MOSFETGeneral Description Max r = 5.8mΩ at V = 10V, I = 13.5A This N-Channel MOSFET is produced usin ..
FDMC8462 ,40V N-Channel Power Trench?MOSFET®FDMC8462 N-Channel Power Trench MOSFETMarch 2008FDMC8462 ..
FDMC8588 ,25V N-Channel PowerTrench?MOSFETApplications RoHS Compliant High side switching for high end computing High power density DC-DC ..
FDMC86102 ,100V N-Channel Shielded Gate Power Trench?MOSFETGeneral Description Max r = 24 mΩ at V = 10 V, I = 7 A This N-Channel MOSFET is produced using ..
FDMC8651 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 6.1 mΩ at V = 4.5 V, I = 15 A This device has been designed specifical ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMC8296
30V N-Channel Power Trench?MOSFET
® FDMC8296 N-Channel Power Trench MOSFET September 2010 FDMC8296 ® � N-Channel Power Trench MOSFET 30V, 18A, 8.0m� Features General Description � Max r = 8.0m� at V = 10V, I = 12A This N-Channel MOSFET is produced using Fairchild DS(on) GS D ® Semiconductor‘s advanced Power Trench process that has � Max r = 13.0m� at V = 4.5V, I = 10A DS(on) GS D been especially tailored to minimize the on-state resistance. This � High performance trench technology for extremely low r device is well suited for Power Management and load switching DS(on) applications common in Notebook Computers and Portable � Termination is Lead-free and RoHS Compliant Battery Packs. Application � DC - DC Buck Converter � Notebook battery power management � Load switch in Notebook Bottom Top Pin 1 G D 5 4 G S S S D 6 S 3 D 7 S 2 D D D 8 1 S D D MLP 3.3x3.3 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 18 C -Continuous (Silicon limited) T = 25°C 44 C I A D -Continuous T = 25°C (Note 1a) 12 A -Pulsed 52 E Single Pulse Avalanche Energy (Note 3) 72 mJ AS Power Dissipation T = 25°C 27 C P W D Power Dissipation T = 25°C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 4.6 �JC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 �JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC8296 FDMC8296 MLP 3.3X3.3 13 ’’ 12 mm 3000 units ©2010 1 FDMC8296 Rev.C1
