FDMC8015L ,40V N-Channel Power Trench?MOSFETApplications Load Switch Motor Bridge SwitchBottomTopD D D D8 7 6 5D 5 G4SD 6 3SD 728 1 SDG S S S ..
FDMC8200 ,30V Dual N-Channel PowerTrench?MOSFETElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Type M ..
FDMC8296 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 8.0m at V = 10V, I = 12A This N-Channel MOSFET is produced using ..
FDMC8462 ,40V N-Channel Power Trench?MOSFETGeneral Description Max r = 5.8mΩ at V = 10V, I = 13.5A This N-Channel MOSFET is produced usin ..
FDMC8462 ,40V N-Channel Power Trench?MOSFET®FDMC8462 N-Channel Power Trench MOSFETMarch 2008FDMC8462 ..
FDMC8588 ,25V N-Channel PowerTrench?MOSFETApplications RoHS Compliant High side switching for high end computing High power density DC-DC ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMC8015L
40V N-Channel Power Trench?MOSFET
® TM FDMC8015L N-Channel PowerTrench MOSFET April 2011 FDMC8015L ® N-Channel Power Trench MOSFET 40 V, 18 A, 26 mΩ Features General Description Max r = 26 mΩ at V = 10 V, I = 7 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D ® Semiconductor's advanced Power Trench process that has Max r = 36 mΩ at V = 4.5 V, I = 6 A DS(on) GS D been especially tailored to minimize the on-state resistance and Low Profile - 1 mm max in Power 33 yet maintain superior switching performance. 100% UIL Tested RoHS Compliant Applications Load Switch Motor Bridge Switch Bottom Top D D D D 8 7 6 5 D 5 G 4 S D 6 3 S D 7 2 8 1 S D G S S S 1 2 3 4 MLP 3.3x3.3 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 40 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 18 C -Continuous (Silicon limited) T = 25°C 22 C I A D -Continuous T = 25°C (Note 1a) 7 A -Pulsed 30 E Single Pulse Avalanche Energy (Note 3) 32 mJ AS Power Dissipation T = 25°C 24 C P W D Power Dissipation T = 25°C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to + 150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 5.1 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC8015L FDMC8015L Power 33 13’’ 12 mm 3000 units ©2011 1 FDMC8015L Rev.C
