FDMC7692S General DescriptionThis FDMC7692S is produced using Fairchild Semiconductor’s Max r = 9.3 m: at V ..
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FDMC7692S
® TM FDMC7692S N-Channel Power Trench SyncFET September 2010 FDMC7692S ® TM N-Channel Power Trench SyncFET 30 V, 12.5 A, 9.3 m: Features General Description This FDMC7692S is produced using Fairchild Semiconductor’s Max r = 9.3 m: at V = 10 V, I = 12.5 A DS(on) GS D ® advanced Power Trench process that has been especially Max r = 13.6 m: at V = 4.5 V, I = 10.4 A DS(on) GS D tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications High performance technology for extremely low r DS(on) common in Notebook Computers and Portable Battery packs. Termination is Lead-free and RoHS Compliant Applications DC - DC Buck Converters Notebook DC - DC application Bottom Top G D 5 4 Pin 1 G S S D 6 3 S S S D 7 2 D D S D 8 1 D D MLP 3.3x3.3 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 18 C I -Continuous T = 25 °C (Note 1a) 12.5 A D A -Pulsed 45 E Sinlge Pulse Avalanche Energy (Note 3) 21 mJ AS Power Dissipation T = 25 °C 27 C P W D Power Dissipation T = 25 °C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 4.7 °C/W TJC R Thermal Resistance, Junction to Ambient (Note 1a) 53 °C/W TJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC7692S FDMC7692S MLP 3.3X3.3 13 ’’ 12 mm 3000 units 1 ©2010 FDMC7692S Rev.C3
