FDMC7680 ,30V N-Channel Power Trench?MOSFETapplications common in Notebook Computers and Portable Termination is Lead-free and RoHS Complian ..
FDMC7680 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 7.2 mΩ at V = 10 V, I = 14.8 A This N-Channel MOSFET is produced us ..
FDMC7692 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 8.5 m at V = 10 V, I = 13.3 A This N-Channel MOSFET is produced us ..
FDMC7692S General DescriptionThis FDMC7692S is produced using Fairchild Semiconductor’s Max r = 9.3 m: at V ..
FDMC7696 ,30V N-Channel PowerTrench?MOSFETApplications DC/DC Buck Converters Notebook battery power management Load Switch in NotebookBott ..
FDMC8015L ,40V N-Channel Power Trench?MOSFETApplications Load Switch Motor Bridge SwitchBottomTopD D D D8 7 6 5D 5 G4SD 6 3SD 728 1 SDG S S S ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMC7680
30V N-Channel Power Trench?MOSFET
® FDMC7680 N-Channel Power Trench MOSFET November 2011 FDMC7680 ® N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 mΩ Features General Description Max r = 7.2 mΩ at V = 10 V, I = 14.8 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D ® Semiconductor’s advanced Power Trench process that has Max r = 9.5 mΩ at V = 4.5 V, I = 12.4 A DS(on) GS D been especially tailored to minimize the on-state resistance. This High performance technology for extremely low r device is well suited for Power Management and load switching DS(on) applications common in Notebook Computers and Portable Termination is Lead-free and RoHS Compliant Battery Packs. Application DC - DC Buck Converters Notebook battery power management Load switch in Notebook Bottom Top Pin 1 G 5 4 G D S S S D 6 S 3 D 7 2 S D D D 8 1 S D D MLP 3.3x3.3 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 18 C I -Continuous T = 25 °C (Note 1a) 14.8 A D A -Pulsed 45 E Single Pulse Avalanche Energy (Note 3) 72 mJ AS Power Dissipation T = 25 °C 31 C P W D Power Dissipation T = 25 °C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 4.0 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC7680 FDMC7680 MLP 3.3x3.3 13 ’’ 12 mm 3000 units ©2011 1 FDMC7680 Rev.C3
