FDMC7200 ,30V Dual N-Channel PowerTrench?MOSFETGeneral DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual Po ..
FDMC7660S Applications Synchronous Rectifier for DC/DC Converters Notebook Vcore/GPU low side switch Netwo ..
FDMC7664 ,30V N-Channel PowerTrench?MOSFETapplications common in Notebook Computers and Portable Termination is Lead-free and RoHS Complian ..
FDMC7664 ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 4.2 m: at V = 10 V ..
FDMC7664 ,30V N-Channel PowerTrench?MOSFETApplications DC - DC Buck Converters Notebook battery power management Load switch in NotebookTo ..
FDMC7672 ,30V N-Channel Power Trench?MOSFETapplications common in Notebook Computers and Portable Termination is Lead-free and RoHS Complian ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMC7200
30V Dual N-Channel PowerTrench?MOSFET
® FDMC7200 Dual N-Channel PowerTrench MOSFET June 2009 FDMC7200 ® Dual N-Channel PowerTrench MOSFET 30 V, 12 mΩ and 23.5 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node Max r = 23.5 mΩ at V = 10 V, I = 6 A DS(on) GS D has been internally connected to enable easy placement and Max r = 38 mΩ at V = 4.5 V, I = 5 A DS(on) GS D routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been Q2: N-Channel designed to provide optimal power efficiency. Max r = 12 mΩ at V = 10 V, I = 8 A DS(on) GS D Max r = 18 mΩ at V = 4.5 V, I = 7 A DS(on) GS D Applications RoHS Compliant Mobile Computing Mobile Internet Devices General Purpose Point of Load D1 D1 Q2 Q2 D1 S2 D1 5 5 4 4 Pin 1 G1 D1 D1 S2 6 6 3 3 D2/S1 S2 D1 7 7 2 2 S2 G1 G2 S2 8 8 1 1 Q1 Q1 S2 G2 BOTTOM BOTTOM Power 33 MOSFET Maximum Ratings T = 25 °C unless otherwise noted C Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 30 30 V DS V Gate to Source Voltage (Note 3) ±20 ±20 V GS Drain Current - Continuous (Package limited) T = 25 °C 8 8 C - Continuous (Silicon limited) T = 25 °C 20 40 C I A D 1a 1b - Continuous T = 25 °C 6 8 A - Pulsed 40 40 1a 1b Power Dissipation T = 25 °C 1.9 2.2 A P W D 1c 1d Power Dissipation T = 25 °C 0.7 0.9 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics 1a 1b R Thermal Resistance, Junction to Ambient 65 55 θJA 1c 1d R Thermal Resistance, Junction to Ambient 180 145 °C/W θJA R Thermal Resistance, Junction to Case 7.5 4 θJC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC7200 FDMC7200 Power 33 13 ” 12 mm 3000 units ©2009 1 FDMC7200 Rev.D1 V V V V G G IIN N V V H HS S IIN N IIN N V V I IN N G GN ND D G GN ND D G G G GN ND D L LS S S SW WI IT TC CH H N NO OD DE E
