FDMC6679AZ ,-30V P-Channel Power Trench?MOSFETapplications. Advancements in both silicon and Max r = 18 mΩ at V = -4.5 V, I = -8.5 ADS(on) GS ..
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FDMC6679AZ
-30V P-Channel Power Trench?MOSFET
® FDMC6679AZ P-Channel PowerTrench MOSFET July 2009 FDMC6679AZ ® P-Channel PowerTrench MOSFET -30 V, -20 A, 10 mΩ Features General Description The FDMC6679AZ has been designed to minimize losses in Max r = 10 mΩ at V = -10 V, I = -11.5 A DS(on) GS D load switch applications. Advancements in both silicon and Max r = 18 mΩ at V = -4.5 V, I = -8.5 A DS(on) GS D package technologies have been combined to offer the lowest r and ESD protection. DS(on) HBM ESD protection level of 8 kV typical(note 3) Extended V range (-25 V) for battery applications GSS Applications High performance trench technology for extremely low r DS(on) Load Switch in Notebook and Server High power and current handling capability Notebook Battery Pack Power Management Termination is Lead-free and RoHS Compliant Bottom Top Pin 1 D 5 4 G G S S D 6 3 S S D 7 2 S D D D D 8 1 S D MLP 3.3x3.3 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -30 V DS V Gate to Source Voltage ±25 V GS Drain Current -Continuous (Package limited) T = 25 °C -20 C -Continuous (Silicon limited) T = 25 °C -51 C I A D -Continuous T = 25 °C (Note 1a) -11.5 A -Pulsed -32 Power Dissipation T = 25 °C 41 C P W D Power Dissipation T = 25 °C (Note 1a) 2.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC6679AZ FDMC6679AZ MLP 3.3x3.3 13 ’’ 12 mm 3000 units ©2009 1 FDMC6679AZ Rev.D1
