FDMC5614P ,-60V P-Channel PowerTrench?MOSFETGeneral Description Max r = 100mΩ at V = -10V, I = -5.7AThis P-Channel MOSFET is a rugged gate ver ..
FDMC6675BZ ,-30V P-Channel Power Trench?MOSFETapplicationsGSS Application High performance trench technology for extremely low rDS(on) Load Sw ..
FDMC6679AZ ,-30V P-Channel Power Trench?MOSFETapplications. Advancements in both silicon and Max r = 18 mΩ at V = -4.5 V, I = -8.5 ADS(on) GS ..
FDMC6890NZ ,20V Dual N-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise notedJSymbol Parameter Test Conditions Type Mi ..
FDMC6890NZ ,20V Dual N-Channel PowerTrench?MOSFETfeatures two Max r = 100mΩ at V = 2.5V, I = 3ADS(on) GS DN-channel MOSFETs with low on-state res ..
FDMC7200 ,30V Dual N-Channel PowerTrench?MOSFETGeneral DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual Po ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMC5614P
-60V P-Channel PowerTrench?MOSFET
® FDMC5614P P-Channel PowerTrench MOSFET September 2010 FDMC5614P ® tm P-Channel PowerTrench MOSFET -60V, -13.5A, 100mΩ Features General Description Max r = 100mΩ at V = -10V, I = -5.7A This P-Channel MOSFET is a rugged gate version of Fairchild DS(on) GS D ® Semiconductor's advanced PowerTrench process. It has been Max r = 135mΩ at V = -4.5V, I = -4.4A DS(on) GS D optimized for power management applications requiring a wide Low gate charge range of gate drive voltage ratings (4.5V-20V). Fast switching speed High performance trench technology for extremely low r DS(on) Application High power and current handling capability Power management RoHS Compliant Load switch Battery protection Bottom Top 5 4 D G Pin 1 D 3 S G 6 S S S D 2 7 S D D S 8 1 D D D MLP 3.3x3.3 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -60 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C -13.5 C -Continuous (Silicon limited) T = 25°C -14 C I A D -Continuous T = 25°C (Note 1a) -5.7 A -Pulsed -23 Power Dissipation T = 25°C 42 C P W D Power Dissipation T = 25°C (Note 1a) 2.1 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3.0 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 60 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 5614P FDMC5614P Power 33 7’’ 8mm 3000 units 1 ©2010 FDMC5614P Rev.C1
