FDMC2674 ,220V N-Channel UltraFET Trench MOSFETapplications. Typ Q = 12.7nC at V = 10Vg GSOptimized for r , low ESR, low total and Miller gate ..
FDMC3020DC Applications Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification Hig ..
FDMC3300NZA , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 8A, 26mΩ
FDMC4435BZ ,-30V P-Channel Power Trench?MOSFETGeneral Description Max r = 20 m at V = -10 V, I = -8.5 A This P-Channel MOSFET is produced ..
FDMC510P ,-20V P-Channel PowerTrench?MOSFETGeneral Description Max r = 8.0 mΩ at V = -4.5 V, I = -12 AThis P-Channel MOSFET is produced ..
FDMC5614P ,-60V P-Channel PowerTrench?MOSFETGeneral Description Max r = 100mΩ at V = -10V, I = -5.7AThis P-Channel MOSFET is a rugged gate ver ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMC2674
220V N-Channel UltraFET Trench MOSFET
FDMC2674 N-Channel UltraFET Trench MOSFET November 2012 FDMC2674 tm N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ Features General Description Max r = 366mΩ at V = 10V, I = 1.0A UltraFET device combines characteristics that enable DS(on) GS D benchmark efficiency in power conversion applications. Typ Q = 12.7nC at V = 10V g GS Optimized for r , low ESR, low total and Miller gate charge, DS(on) Low Miller charge these devices are ideal for high frequency DC to DC converters. Low Q Body Diode rr Application Optimized efficiency at high frequencies DC/DC converters and Off-Line UPS UIS Capability ( Single Pulse and Repetitive Pulse) Distributed Power Architectures RoHS Compliant Bottom Top DD D D 8 7 6 5 D 5 4 G D 6 3 S D 7 S 2 S D 8 1 G S S S 1 2 3 4 MLP 3.3x3.3 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 220 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Silicon limited) T = 25°C 7.0 C I -Continuous T = 25°C (Note 1b) 1.0 A D A -Pulsed 13.8 E Single Pulse Avalanche Energy (Note 3) 11 mJ AS Power Dissipation T = 25°C 42 C P W D Power Dissipation T = 25°C (Note 1a) 2.1 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 3.0 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 60 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC2674 FDMC2674 MLP 3.3X3.3 13 ’’ 12 mm 3000 units 1 ©2012 FDMC2674 Rev.F3
