FDMC2610 ,200V N-Channel UltraFET Trench MOSFETapplications. RoHS Compliant Application DC - DC ConversionBottomTopD D D D8 7 6 5GD 5 4D S6 3D 7 ..
FDMC2674 ,220V N-Channel UltraFET Trench MOSFETapplications. Typ Q = 12.7nC at V = 10Vg GSOptimized for r , low ESR, low total and Miller gate ..
FDMC3020DC Applications Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification Hig ..
FDMC3300NZA , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 8A, 26mΩ
FDMC4435BZ ,-30V P-Channel Power Trench?MOSFETGeneral Description Max r = 20 m at V = -10 V, I = -8.5 A This P-Channel MOSFET is produced ..
FDMC510P ,-20V P-Channel PowerTrench?MOSFETGeneral Description Max r = 8.0 mΩ at V = -4.5 V, I = -12 AThis P-Channel MOSFET is produced ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
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FDMC2610
200V N-Channel UltraFET Trench MOSFET
® FDMC2610 N-Channel UltraFET Trench MOSFET November 2012 FDMC2610 ® N-Channel UltraFET Trench MOSFET 200V, 9.5A, 200mΩ Features General Description Max r = 200mΩ at V = 10V, I = 2.2A This N-Channel MOSFET is a rugged gate version of DS(on) GS D Fairchild Semiconductor‘s advanced Power Trench Max r = 215mΩ at V = 6V, I = 1.5A DS(on) GS D process. It has been optimized for power management Low Profile - 1mm max in a Power 33 applications. RoHS Compliant Application DC - DC Conversion Bottom Top D D D D 8 7 6 5 G D 5 4 D S 6 3 D 7 2 S D S 8 1 G S S S 1 2 3 4 Pin 1 MLP 3.3x3.3 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 200 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Silicon limited) T = 25°C 9.5 C I -Continuous T = 25°C (Note 1a) 2.2 A D A -Pulsed 15 Power Dissipation T = 25°C 42 C P W D Power Dissipation T = 25°C (Note 1a) 2.1 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 60 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC2610 FDMC2610 MLP 3.3x3.3 13 ’’ 12 mm 3000 units 1 ©2012 FDMC2610 Rev.C2
