FDMB3800N ,30V Dual N-Channel PowerTrench?MOSFETapplications where low in-line power loss and fast High performance trench technology for extreme ..
FDMC0310AS Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters 100% UIL test ..
FDMC2514SDC Applications Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification Hig ..
FDMC2610 ,200V N-Channel UltraFET Trench MOSFETapplications. RoHS Compliant Application DC - DC ConversionBottomTopD D D D8 7 6 5GD 5 4D S6 3D 7 ..
FDMC2674 ,220V N-Channel UltraFET Trench MOSFETapplications. Typ Q = 12.7nC at V = 10Vg GSOptimized for r , low ESR, low total and Miller gate ..
FDMC3020DC Applications Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification Hig ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMB3800N
30V Dual N-Channel PowerTrench?MOSFET
® FDMB3800N Dual N-Channel PowerTrench MOSFET August 2012 FDMB3800N ® Dual N-Channel PowerTrench MOSFET� 30V, 4.8A, 40m� Features General Description � Max r = 40m� at V = 10V, I = 4.8A These N-Channel Logic Level MOSFETs are produced using DS(on) GS D Fairchild Semiconductor's advanced PowerTrench process that � Max r = 51m� at V = 4.5V, I = 4.3A DS(on) GS D has been especially tailored to minimize the on-state resistance � Fast switching speed and yet maintain superior switching performance. � Low gate Charge These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast � High performance trench technology for extremely low r DS(on) switching are required. � High power and current handling capability. � RoHS Compliant Q2 4 D2 5 G2 D2 6 3 S2 Q1 7 2 G1 D1 D1 8 1 S1 MicroFET 3X1.9 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous T = 25°C (Note 1a) 4.8 A I A D -Pulsed 9 Power Dissipation T = 25°C Note 1a) 1.6 A P W D Power Dissipation T = 25°C (Note 1b) 0.75 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 80 �JA °C/W R Thermal Resistance, Junction to Ambient (Note 1b) 165 �JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 3800 FDMB3800N MicroFET3X1.9 7’’ 8mm 3000 units 1 ©2012 FDMB3800N Rev. C2
