FDMA6023PZT ,-20V Dual P-Channel PowerTrench?MOSFETApplications Free from halogenated compounds and antimony oxides Battery protection Battery mana ..
FDMA6023PZT ,-20V Dual P-Channel PowerTrench?MOSFETElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Min Ty ..
FDMB2307NZ ,20V Dual Common Drain N-Channel PowerTrench?MOSFETfeatures two common drain N-channel Max r = 21 mΩ at V = 3.1 V, I = 7 AS1S2(on) GS DMOSFETs, whic ..
FDMB3800N ,30V Dual N-Channel PowerTrench?MOSFETapplications where low in-line power loss and fast High performance trench technology for extreme ..
FDMC0310AS Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters 100% UIL test ..
FDMC2514SDC Applications Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification Hig ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
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FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
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FDMA6023PZT
-20V Dual P-Channel PowerTrench?MOSFET
® FDMA6023PZT Dual P-Channel PowerTrench MOSFET June 2009 FDMA6023PZT ® Dual P-Channel PowerTrench MOSFET -20 V, -3.6 A, 60 mΩ Features General Description Max r = 60 mΩ at V = -4.5 V, I = -3.6 A This device is designed specifically as a single package solution DS(on) GS D for the battery charge switch in cellular handset and other Max r = 80 mΩ at V = -2.5 V, I = -3.0 A DS(on) GS D ultraportable applications. It features two independent Max r = 110 mΩ at V = -1.8 V, I = -2.0 A P-Channel MOSFETs with low on-state resistance for minimum DS(on) GS D conduction losses. When connected in the typical common Max r = 170 mΩ at V = -1.5 V, I = -1.0 A DS(on) GS D source configuration, bi-directional current flow is possible. Low Profile-0.55 mm maximum - in the new package The MicroFET 2X2 Thin package offers exceptional thermal MicroFET 2x2 mm Thin performance for it’s physical size and is well suited to linear HBM ESD protection level > 2.4 kV typical (Note 3) mode applications. RoHS Compliant Applications Free from halogenated compounds and antimony oxides Battery protection Battery management Load switch Pin 1 S1 G1 D2 Q1 6 D1 S1 1 D1 D2 G2 G1 2 5 4 D2 3 S2 D1 G2 S2 Q2 MicroFET 2x2 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -20 V DS V Gate to Source Voltage ±8 V GS -Continuous T = 25 °C (Note 1a) -3.6 A I A D -Pulsed -15 Power Dissipation T = 25 °C (Note 1a) 1.4 A P W D Power Dissipation T = 25 °C (Note 1b) 0.7 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance for Single Operation, Junction to Ambient (Note 1a) 86 θJA R Thermal Resistance for Single Operation, Junction to Ambient (Note 1b) 173 θJA °C/W R Thermal Resistance for Dual Operation, Junction to Ambient (Note 1c) 69 θJA R Thermal Resistance for Dual Operation, Junction to Ambient (Note 1d) 151 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 623 FDMA6023PZT MicroFET 2X2 Thin 7 ’’ 8mm 3000 units 1 ©2009 FDMA6023PZT Rev.B1
