FDMA530PZ ,-30V Single P-Channel PowerTrench?MOSFETapplications. HBM ESD protection level > 3kV typical (Note 3) Free from halogenated compounds ..
FDMA530PZ ,-30V Single P-Channel PowerTrench?MOSFET®FDMA530PZ Single P-Channel PowerTrench MOSFET ..
FDMA6023PZT ,-20V Dual P-Channel PowerTrench?MOSFETApplications Free from halogenated compounds and antimony oxides Battery protection Battery mana ..
FDMA6023PZT ,-20V Dual P-Channel PowerTrench?MOSFETElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Min Ty ..
FDMB2307NZ ,20V Dual Common Drain N-Channel PowerTrench?MOSFETfeatures two common drain N-channel Max r = 21 mΩ at V = 3.1 V, I = 7 AS1S2(on) GS DMOSFETs, whic ..
FDMB3800N ,30V Dual N-Channel PowerTrench?MOSFETapplications where low in-line power loss and fast High performance trench technology for extreme ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMA530PZ
-30V Single P-Channel PowerTrench?MOSFET
® FDMA530PZ Single P-Channel PowerTrench MOSFET June 2011 tm FDMA530PZ ® Single P-Channel PowerTrench MOSFET –30V, –6.8A, 35mΩ Features General Description Max r = 35mΩ at V = –10V, I = –6.8A This device is designed specifically for battery charge or load DS(on) GS D switching in cellular handset and other ultraportable Max r = 65mΩ at V = –4.5V, I = –5.0A DS(on) GS D applications . It features a MOSFET with low on-state resistance. Low profile - 0.8mm maximum - in the new package MicroFET The MicroFET 2X2 package offers exceptional thermal 2X2 mm performance for its physical size and is well suited to linear mode applications. HBM ESD protection level > 3kV typical (Note 3) Free from halogenated compounds and antimony oxides RoHS Compliant Pin 1 G D D Bottom Drain Contact 1 D 6 D Drain Source D 2 5 D 4 G 3 S D D S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage –30 V DS V Gate to Source Voltage ±25 V GS Drain Current -Continuous (Note 1a) –6.8 I A D -Pulsed –24 Power Dissipation (Note 1a) 2.4 P W D Power Dissipation (Note 1b) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 52 θJA °C/W R Thermal Resistance, Junction to Ambient (Note 1b) 145 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 530 FDMA530PZ MicroFET 2X2 7’’ 8mm 3000 units 1 ©2011 FDMA530PZ Rev.C1
