FDMA510PZ ,-20V Single P-Channel PowerTrench?MOSFETapplications. Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm HBM ESD protection ..
FDMA510PZ ,-20V Single P-Channel PowerTrench?MOSFETfeatures a MOSFET with low on-state resistance. Max r = 50m: at V = –1.8V, I = –5.5ADS(on) GS DThe ..
FDMA520PZ ,-20V Single P-Channel PowerTrench?MOSFETapplications. Free from halogenated compounds and antimony oxides RoHS Compliant Pin 1GD DBottom ..
FDMA530PZ ,-30V Single P-Channel PowerTrench?MOSFETapplications. HBM ESD protection level > 3kV typical (Note 3) Free from halogenated compounds ..
FDMA530PZ ,-30V Single P-Channel PowerTrench?MOSFET®FDMA530PZ Single P-Channel PowerTrench MOSFET ..
FDMA6023PZT ,-20V Dual P-Channel PowerTrench?MOSFETApplications Free from halogenated compounds and antimony oxides Battery protection Battery mana ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMA510PZ
-20V Single P-Channel PowerTrench?MOSFET
® FDMA510PZ Single P-Channel PowerTrench MOSFET April 2009 FDMA510PZ tm ® Single P-Channel PowerTrench MOSFET –20V, –7.8A, 30m: Features General Description Max r = 30m: at V = –4.5V, I = –7.8A This device is designed specifically for battery charge or load DS(on) GS D switching in cellular handset and other ultraportable applications. Max r = 37m: at V = –2.5V, I = –6.6A DS(on) GS D It features a MOSFET with low on-state resistance. Max r = 50m: at V = –1.8V, I = –5.5A DS(on) GS D The MicroFET 2X2 package offers exceptional thermal Max r = 90m: at V = –1.5V, I = –2.0A performance for its physical size and is well suited to linear mode DS(on) GS D applications. Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm HBM ESD protection level > 3KV typical (Note 3) Free from halogenated compounds and antimony oxides RoHS Compliant Pin 1 G D D Bottom Drain Contact D 1 6 D Drain Source D 2 5 D 3 4 G S D D S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage –20 V DS V Gate to Source Voltage ±8 V GS Drain Current -Continuous (Note 1a) –7.8 I A D -Pulsed –24 Power Dissipation (Note 1a) 2.4 P W D Power Dissipation (Note 1b) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 52 TJA °C/W R Thermal Resistance, Junction to Ambient (Note 1b) 145 TJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 510 FDMA510PZ MicroFET 2X2 7’’ 8mm 3000units 1 ©2009 FDMA510PZ Rev.B2
