FDMA430NZ ,30V Single N-Channel 2.5V Specified PowerTrench. 甅OSFETApplications HBM ESD protection level > 2.5kV typical (Note 3) Li-lon Battery Pack Free from ha ..
FDMA430NZ ,30V Single N-Channel 2.5V Specified PowerTrench. 甅OSFETFeaturesThis Single N-Channel MOSFET has been designed using R = 40m @ V = 4.5 V, I = 5.0A ..
FDMA510PZ ,-20V Single P-Channel PowerTrench?MOSFETapplications. Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm HBM ESD protection ..
FDMA510PZ ,-20V Single P-Channel PowerTrench?MOSFETfeatures a MOSFET with low on-state resistance. Max r = 50m: at V = –1.8V, I = –5.5ADS(on) GS DThe ..
FDMA520PZ ,-20V Single P-Channel PowerTrench?MOSFETapplications. Free from halogenated compounds and antimony oxides RoHS Compliant Pin 1GD DBottom ..
FDMA530PZ ,-30V Single P-Channel PowerTrench?MOSFETapplications. HBM ESD protection level > 3kV typical (Note 3) Free from halogenated compounds ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMA430NZ
30V Single N-Channel 2.5V Specified PowerTrench. 甅OSFET
® FDMA430NZ Single N-Channel 2.5V Specified PowerTrench MOSFET August 2009 FDMA430NZ tm ® Single N-Channel 2.5V Specified PowerTrench MOSFET 30V, 5.0A, 40m� General Description Features This Single N-Channel MOSFET has been designed using � R = 40m� @ V = 4.5 V, I = 5.0A DS(on) GS D Fairchild Semiconductor’s advanced Power Trench process � R = 50m��@ V = 2.5 V, I = 4.5A to optimize the R (on) @V =2.5V on special MicroFET DS(on) GS D DS GS leadframe. �Low Profile-0.8mm maximum-in the new package MicroFET 2x2 mm Applications � HBM ESD protection level > 2.5kV typical (Note 3) � Li-lon Battery Pack � Free from halogenated compounds and antimony oxides RoHS Compliant � Pin 1 D G D S 4 3 G Drain Source 5 2 D D 6 1 D D Bottom Drain Contact D D S MicroFET 2X2 (Bottom View) Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage �12 V GSS 5.0 Drain Current -Continuous (Note 1a) I A D -Pulsed 20 Power dissipation (Steady State) (Note 1a) 2.4 P W D (Note 1b) 0.9 o T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 52 �JA o C/W R Thermal Resistance, Junction-to-Ambient (Note 1b) 145 �JA Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity 430 FDMA430NZ 7” 12mm 3000 units ©2009 1 FDMA430NZ Rev B4
