FDMA1029PZ ,-20V Dual P-Channel PowerTrench?MOSFETfeatures two Low profile – 0.8 mm maximum – in the new package independent P-Channel MOSFETs wi ..
FDMA2002NZ ,Dual N-Channel PowerTrench?MOSFETfeatures two independent N-Channel MOSFETs with x Low profile – 0.8 mm maximum – in the new package ..
FDMA2002NZ ,Dual N-Channel PowerTrench?MOSFETapplications. Free from halogenated compounds and antimony oxidesPIN 1 S1 G1 D2D1S1 1 6D1 ..
FDMA291P ,Single P-Channel 1.8V Specified PowerTrench?MOSFETFDMA291P Single P-Channel 1.8V Specified PowerTrench MOSFET April 2009tmFDMA291PSingle P-Channel ..
FDMA291P ,Single P-Channel 1.8V Specified PowerTrench?MOSFETapplications. oxidesRoHS Compliant D D GPin 1 Bottom Drain ContactSourceDrainD1 ..
FDMA291P ,Single P-Channel 1.8V Specified PowerTrench?MOSFETfeatures a MOSFET with low r = 98 m: @ V = –1.8V DS(ON) GSon-state resistance. x Low profile – ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
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FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMA1029PZ
-20V Dual P-Channel PowerTrench?MOSFET
� FDMA1029PZ Dual P-Channel PowerTrench MOSFET May 2009 tm tm FDMA1029PZ � Dual P-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package � � –3.1 A, –20V. R = 95 m� @ V = –4.5V DS(ON) GS solution for the battery charge switch in cellular handset R = 141 m� @ V = –2.5V DS(ON) GS and other ultra-portable applications. It features two � � Low profile – 0.8 mm maximum – in the new package independent P-Channel MOSFETs with low on-state MicroFET 2x2 mm resistance for minimum conduction losses. When �� HBM ESD protection level > 2.5kV (Note 3) connected in the typical common source configuration, � RoHS Compliant bi-directional current flow is possible. � The MicroFET 2x2 package offers exceptional thermal � Free from halogenated compounds and antimony performance for its physical size and is well suited to oxides linear mode applications. PIN 1 S1 G1 D2 D1 D2 D1 S1 1 6 G1 2 5 G2 D1 G2 S2 3 D2 4 S2 MicroFET 2x2 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DS V Gate-Source Voltage �12 V GS A Drain Current – Continuous (Note 1a) –3.1 I D – Pulsed –6 P W D Power Dissipation for Single Operation (Note 1a) 1.4 (Note 1b) 0.7 T , T Operating and Storage Junction Temperature Range –55 to +150 �C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 86 (Single Operation) �JA R Thermal Resistance, Junction-to-Ambient (Note 1b) 173 (Single Operation) �JA �C/W R Thermal Resistance, Junction-to-Ambient (Note 1c) 69 (Dual Operation) �JA R Thermal Resistance, Junction-to-Ambient (Note 1d) 151 (Dual Operation) �JA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 029 FDMA1029PZ 7’’ 8mm 3000 units �2009 FDMA1029PZ R ev.B3(W)
