FDMA1028NZ ,20V Dual N-Channel PowerTrench?MOSFETapplications. oxidesPIN 1 S1 G1 D2D1 D2 S1 D11 6G1 2 5 G2 D1 G2 S2 D2 3 4 S2Mic ..
FDMA1028NZ ,20V Dual N-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions MinTyp ..
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FDMA1028NZ
20V Dual N-Channel PowerTrench?MOSFET
FDMA1028NZ Dual N-Channel PowerTrench MOSFET January 2013 FDMA1028NZ Dual N-Channel PowerTrench MOSFET General Description Features x 3.7 A, 20V. R = 68 m: @ V = 4.5V This device is designed specifically as a single package DS(ON) GS R = 86 m: @ V = 2.5V solution for dual switching requirements in cellular DS(ON) GS x Low profile – 0.8 mm maximum – in the new package handset and other ultra-portable applications. It MicroFET 2x2 mm features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. x HBM ESD protection level > 2kV (Note 3) The MicroFET 2x2 package offers exceptional thermal x RoHS Compliant performance for its physical size and is well suited to Free from halogenated compounds and antimony linear mode applications. oxides PIN 1 S1 G1 D2 D1 D2 S1 D1 1 6 G1 2 5 G2 D1 G2 S2 D2 3 4 S2 MicroFET 2x2 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DS V Gate-Source Voltage r12 V GS A Drain Current – Continuous (Note 1a) 3.7 I D – Pulsed 6 P Power Dissipation for Single Operation (Note 1a) 1.4 W D (Note 1b) 0.7 T , T Operating and Storage Junction Temperature Range –55 to +150 qC J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 86 (Single Operation) TJA Thermal Resistance, Junction-to-Ambient (Note 1b) 173 (Single Operation) R TJA qC/W R Thermal Resistance, Junction-to-Ambient (Note 1c) 69 (Dual Operation) TJA R Thermal Resistance, Junction-to-Ambient (Note 1d) 151 (Dual Operation) TJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 028 FDMA1028NZ 7’’ 8mm 3000 units 203 FDMA1028NZ Rev B6
