FDMA1027P ,-20V Dual P-Channel PowerTrench?MOSFETfeatures two R = 160 m @ V = -2.5 VDS(ON) GSindependent P-Channel MOS ..
FDMA1028NZ ,20V Dual N-Channel PowerTrench?MOSFETapplications. oxidesPIN 1 S1 G1 D2D1 D2 S1 D11 6G1 2 5 G2 D1 G2 S2 D2 3 4 S2Mic ..
FDMA1028NZ ,20V Dual N-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions MinTyp ..
FDMA1029PZ ,-20V Dual P-Channel PowerTrench?MOSFETfeatures two Low profile – 0.8 mm maximum – in the new package independent P-Channel MOSFETs wi ..
FDMA2002NZ ,Dual N-Channel PowerTrench?MOSFETfeatures two independent N-Channel MOSFETs with x Low profile – 0.8 mm maximum – in the new package ..
FDMA2002NZ ,Dual N-Channel PowerTrench?MOSFETapplications. Free from halogenated compounds and antimony oxidesPIN 1 S1 G1 D2D1S1 1 6D1 ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMA1027P
-20V Dual P-Channel PowerTrench?MOSFET
® FDMA1027P Dual P-Channel PowerTrench MOSFET May 2010 FDMA1027P ® Dual P-Channel PowerTrench MOSFET� General Description Features This device is designed specifically as a single package � -3.0 A, -20V. R = 120 m� @ V = -4.5 V solution for the battery charge switch in cellular handset DS(ON) GS and other ultra-portable applications. It features two R = 160 m� @ V = -2.5 V DS(ON) GS independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When R = 240 m� @ V = -1.8 V DS(ON) GS connected in the typical common source configuration, bi-directional current flow is possible. � Low Profile - 0.8 mm maximun - in the new package The MicroFET 2x2 package offers exceptional thermal MicroFET 2x2 mm performance for it's physical size and is well suited to linear � RoHS Compliant mode applications. Free from halogenated compounds and antimony oxides PIN1 S1 G1 D2 1 S1 6 D1 D1 D2 2 5 G2 G1 D2 3 4 S2 G2 S2 D1 MicroFET 2X2 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V MOSFET Drain-Source Voltage -20 V DSS V MOSFET Gate-Source Voltage �8V GSS -3.0 Drain Current -Continuous (Note 1a) I A D -Pulsed -6 1.4 (Note 1a) Power dissipation (Note 1b) 0.7 P D W 1.8 (Note 1c) (Note 1d) 0.8 o T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance for Single Operation, Junction-to-Ambient (Note 1a) 86 �JA R Thermal Resistance for Single Operation, Junction-to-Ambient (Note 1b) 173 �JA o C/W R Thermal Resistance for Dual Operation, Junction-to-Ambient (Note 1c) 69 �JA R Thermal Resistance for Dual Operation, Junction-to-Ambient (Note 1d) 151 �JA Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity 027 FDMA1027P 7" 8mm 3000 units ©2010 1 FDMA1027P Rev.D5
