FDMA1027P ,-20V Dual P-Channel PowerTrench?MOSFETfeatures two R = 160 m @ V = -2.5 VDS(ON) GSindependent P-Channel MOS ..
FDMA1028NZ ,20V Dual N-Channel PowerTrench?MOSFETapplications. oxidesPIN 1 S1 G1 D2D1 D2 S1 D11 6G1 2 5 G2 D1 G2 S2 D2 3 4 S2Mic ..
FDMA1028NZ ,20V Dual N-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions MinTyp ..
FDMA1029PZ ,-20V Dual P-Channel PowerTrench?MOSFETfeatures two Low profile – 0.8 mm maximum – in the new package independent P-Channel MOSFETs wi ..
FDMA2002NZ ,Dual N-Channel PowerTrench?MOSFETfeatures two independent N-Channel MOSFETs with x Low profile – 0.8 mm maximum – in the new package ..
FDMA2002NZ ,Dual N-Channel PowerTrench?MOSFETapplications. Free from halogenated compounds and antimony oxidesPIN 1 S1 G1 D2D1S1 1 6D1 ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMA1023PZ
-20V Dual P-Channel PowerTrench?MOSFET
® FDMA1023PZ Dual P-Channel PowerTrench MOSFET May 2009 FDMA1023PZ ® tm Dual P-Channel PowerTrench MOSFET –20V, –3.7A, 72m: Features General Description Max r = 72m: at V = –4.5V, I = –3.7A This device is designed specifically as a single package DS(on) GS D solution for the battery charge switch in cellular handset Max r = 95m: at V = –2.5V, I = –3.2A DS(on) GS D and other ultra-portable applications. It features two independent Max r = 130m: at V = –1.8V, I = –2.0A P-Channel MOSFETs with low on-state resistance for minimum DS(on) GS D conduction losses. When connected in the typical common Max r = 195m: at V = –1.5V, I = –1.0A DS(on) GS D source configuration, bi-directional current flow is possible. Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode HBM ESD protection level > 2kV typical (Note 3) applications. RoHS Compliant Free from halogenated compounds and antimony oxides Pin 1 S1 G1 D2 6 D1 S1 1 D1 D2 5 G2 G1 2 D2 4 3 S2 D1 G2 S2 MicroFET 2X2 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage –20 V DS V Gate to Source Voltage ±8 V GS Drain Current -Continuous (Note 1a) –3.7 I A D -Pulsed –6 Power Dissipation (Note 1a) 1.5 P W D (Note 1b) 0.7 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance for Single Operation, Junction to Ambient (Note 1a) 86 TJA R Thermal Resistance for Single Operation, Junction to Ambient (Note 1b) 173 TJA °C/W R Thermal Resistance for Dual Operation, Junction to Ambient (Note 1c) 69 TJA R Thermal Resistance for Dual Operation, Junction to Ambient (Note 1d) 151 TJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 023 FDMA1023PZ MicroFET 2X2 7” 8mm 3000 units ©2009 1 FDMA1023PZ Rev.C3
