FDM606P ,P-Channel 1.8V Logic Level Power Trench ?MOSFETApplicationsLoadswitch Battery charge Battery disconnect circuitsDDDBottomview 3 X 2 (8 Lead)1 8 ..
FDM6296 ,30V Single N-Channel, Logic-Level, PowerTrench MOSFETGeneral Description 11.5 A, 30 V R = 10.5 mΩ @ V = 10 V This single N-Channel MOSFET in the therma ..
FDMA1023PZ ,-20V Dual P-Channel PowerTrench?MOSFETGeneral Description Max r = 72m: at V = –4.5V, I = –3.7AThis device is designed specifically as a ..
FDMA1027P ,-20V Dual P-Channel PowerTrench?MOSFETfeatures two R = 160 m @ V = -2.5 VDS(ON) GSindependent P-Channel MOS ..
FDMA1028NZ ,20V Dual N-Channel PowerTrench?MOSFETapplications. oxidesPIN 1 S1 G1 D2D1 D2 S1 D11 6G1 2 5 G2 D1 G2 S2 D2 3 4 S2Mic ..
FDMA1028NZ ,20V Dual N-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions MinTyp ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDM606P
P-Channel 1.8V Logic Level Power Trench ?MOSFET
FDM606P July 2002 FDM606P ® P-Channel 1.8V Logic Level Power Trench MOSFET General Description Features This P-Channel MOSFET is produced using FairchildFast switching Semiconductor’s advanced PowerTrench process that has r =0.026Ω (Typ), V = -4.5V been especially tailored to minimize the on-state resistance DS(ON) GS and yet maintain low gate charge for superior switching r =0.033Ω (Typ), V = -2.5V performance. These devices are well suited for portable DS(ON) GS electronics applications. r =0.052Ω (Typ), V = -1.8V DS(ON) GS Applications Loadswitch Battery charge Battery disconnect circuits D D D Bottomview 3 X 2 (8 Lead) 1 8 D SinglePad G ShortPin 2 7 1 3 6 D D 4 5 D S S MicroFET 3x2-8 MOSFET Maximum Ratings T =25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -20 V DSS V Gate to Source Voltage ±8V GS Drain Current o -6.8 A Continuous (T =25 C, V = - 4.5V) C GS o I Continuous (T =100 C, V = - 2.5V) -3.8 A D C GS o Continuous (T =100 C, V = -1.8V) -3.0 A C GS Pulsed Figure 4 Power dissipation 1.92 W P D o Derate above 25°C 15.4 mW/ C o T ,T Operating and Storage Temperature -55 to 150 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case (Note1) 6.0 C/W θJC o R Thermal Resistance Junction to Ambient (Note 2) 65 C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity .06P FDM606P MicroFET3x2 178 mm 8 mm 3000 ©2002 FDM606P Rev. C
