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|FDM3622 ,100V N-Channel UltraFet Trench.MOSFET®FDM3622 N-Channel PowerTrench MOSFETJanuary 2005FDM3622®N-Channel PowerTrench MOSFET100V, 4.4A, 60 ..|
FDM3622 ,100V N-Channel UltraFet Trench.MOSFETApplications
|100V N-Channel UltraFet Trench.MOSFET|
® FDM3622 N-Channel PowerTrench MOSFET January 2005 FDM3622 ® N-Channel PowerTrench MOSFET 100V, 4.4A, 60mΩ Features General Description r = 44mΩ (Typ.), V = 10V, I = 4.4A This N-Channel MOSFET is produced using Fairchild DS(ON) GS D Semiconductor’s advanced PowerTrench process that has Q (tot) = 13nC (Typ.), V = 10V g GS been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switchingLow Miller Charge performance. Low Q Body Diode RR Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse) Applications Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Formerly developmental type 82744 1 8 2 7 3 6 4 5 MicroFET 3.3 x 3.3 ©2005 1 FDM3622 Rev. A