FDM3300NZ ,Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFETFeatures This dual N-Channel MOSFET has been designed · 10 A, 20 V R = 23 mW @ V = 4.5 V DS(ON) GS ..
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FDM3300NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
February 2003
FDM3300NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
General Description This dual N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead frame with all the drains on one side of the package.
Applications Li-Ion Battery Pack
Features 10 A, 20 V RDS(ON) = 23 mW @ VGS = 4.5 V RDS(ON) = 28 mW @ VGS = 2.5 V > 2000v ESD Protection Low Profile – 1mm maximum – in the new package
MicroFET 3.3x3.3 mm
4321
Absolute Maximum Ratings TA=25o C unless otherwise noted
Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V
VGSS Gate-Source Voltage ±12 V
ID Drain Current – Continuous (Note 1a) 10 A – Pulsed 40
PD Power Dissipation (Steady State) (Note 1a) 2.5 W (Note 1b) 1.2 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 52 °C/W
RqJA Thermal Resistance, Junction-to-Ambient (Note 1b) 108
RqJC Thermal Resistance, Junction-to-Case (Note 1) 5
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity 3300N FDM3300NZ 7’’ 12mm 3000 units
MicroFET D2D1D1D2D1G1S2G2D2D1D1D2D1G1S2G2
