FDM6296 ,30V Single N-Channel, Logic-Level, PowerTrench MOSFETGeneral Description 11.5 A, 30 V R = 10.5 mΩ @ V = 10 V This single N-Channel MOSFET in the therma ..
FDMA1023PZ ,-20V Dual P-Channel PowerTrench?MOSFETGeneral Description Max r = 72m: at V = –4.5V, I = –3.7AThis device is designed specifically as a ..
FDMA1027P ,-20V Dual P-Channel PowerTrench?MOSFETfeatures two R = 160 m @ V = -2.5 VDS(ON) GSindependent P-Channel MOS ..
FDMA1028NZ ,20V Dual N-Channel PowerTrench?MOSFETapplications. oxidesPIN 1 S1 G1 D2D1 D2 S1 D11 6G1 2 5 G2 D1 G2 S2 D2 3 4 S2Mic ..
FDMA1028NZ ,20V Dual N-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions MinTyp ..
FDMA1029PZ ,-20V Dual P-Channel PowerTrench?MOSFETfeatures two Low profile – 0.8 mm maximum – in the new package independent P-Channel MOSFETs wi ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDM 6296-FDM6296
30V Single N-Channel, Logic-Level, PowerTrench MOSFET
FDM6296 Single N-Channel, Logic-Level, PowerTrench® MOSFET December 2004 FDM6296 ® Single N-Channel, Logic-Level, PowerTrench MOSFET Features General Description ■ 11.5 A, 30 V R = 10.5 mΩ @ V = 10 V This single N-Channel MOSFET in the thermally efficient Micro- DS(ON) GS R = 15 mΩ @ V = 4.5 V FET package has been specifically designed to perform well in DS(ON) GS Point of Load converters. Providing an optimized balance ■ Low Qg, Qgd and Rg for efficient switching performance between Rds(on) and gate charge this device can be effectively ■ Low Profile – MicroFET 3.3 x 3.3 mm used as a “high side” control switch or “low side” synchronous rectifier. Applications ■ Point of Load Converter ■ 1/16 Brick Synchronous Rectifier MicroFET Bottom Top 8 5 4 7 6 5 6 3 7 2 1 8 1 2 3 4 Absolute Maximum Ratings T =25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) 11.5 A D – Pulsed 40 P Power Dissipation (Steady State) (Note 1a) 2.5 W D (Note 1b) 1.2 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 52 °C/W θJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 108 θJA R Thermal Resistance, Junction-to-Case (Note 1) 5 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 6296 FDM6296 7’’ 12mm 3000 units ©2004 1 FDM6296 Rev. D
