FDLl400 ,High Voltage General Purpose DiodeFDH400 / FDLL400FDH/FDLL 400COLOR BAND MARKINGDEVICE 1ST BAND 2ND BANDFDLL400 BROWN VIOLETLL-34DO-3 ..
FDLL400 ,High Voltage General Purpose DiodeFDH400 / FDLL400FDH/FDLL 400COLOR BAND MARKINGDEVICE 1ST BAND 2ND BANDFDLL400 BROWN VIOLETLL-34DO-3 ..
FDLL400 ,High Voltage General Purpose Diodeapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
FDLL4148 ,Small Signal Diodeapplications involving pulsed or low duty cycle operations.Thermal Characteristics Symbol Charac ..
FDLL4148_NL ,High Conductance Fast Diodeapplications involving pulsed or low duty cycle operations.Thermal Characteristics Symbol Charac ..
FDLL4150 ,High Conductance Ultra Fast Diode
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDLl400
High Voltage General Purpose Diode
FDH400 / FDLL400 FDH/FDLL 400 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL400 BROWN VIOLET LL-34 DO-35THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Voltage General Purpose Diode Sourced from Process 1J. See MMBD1401-1405 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units W Working Inverse Voltage FDH/FDLL400 150 V IV IO Average Rectified Current 200 mA I DC Forward Current 500 mA F Recurrent Peak Forward Current 600 mA i f Peak Forward Surge Current if(surge) Pulse width = 1.0 second 1.0 A Pulse width = 1.0 microsecond 4.0 A Storage Temperature Range -65 to +200 T °C stg T Operating Junction Temperature 175 ° J C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units FDH/FDLL 400 P Total Device Dissipation 500 mW D 3.33 Derate above 25°C mW/°C Thermal Resistance, Junction to Ambient 300 R °C/W θJA 1997 Fairchild Semiconductor International
