FDLL300 ,High Conductance Low Leakage DiodeElectrical Characteristics TA = 25°C unless otherwise notedSymbol Parameter Test Conditions Mi ..
FDLl400 ,High Voltage General Purpose DiodeFDH400 / FDLL400FDH/FDLL 400COLOR BAND MARKINGDEVICE 1ST BAND 2ND BANDFDLL400 BROWN VIOLETLL-34DO-3 ..
FDLL400 ,High Voltage General Purpose DiodeFDH400 / FDLL400FDH/FDLL 400COLOR BAND MARKINGDEVICE 1ST BAND 2ND BANDFDLL400 BROWN VIOLETLL-34DO-3 ..
FDLL400 ,High Voltage General Purpose Diodeapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
FDLL4148 ,Small Signal Diodeapplications involving pulsed or low duty cycle operations.Thermal Characteristics Symbol Charac ..
FDLL4148_NL ,High Conductance Fast Diodeapplications involving pulsed or low duty cycle operations.Thermal Characteristics Symbol Charac ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDLL300
High Conductance Low Leakage Diode
FDH300/A / FDLL300/A / FDH333 / FDLL333 FDH/FDLL 300/A / 333 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL300 BROWN GREEN FDLL300A BROWN YELLOW FDLL333 BROWN BLUE LL-34 THE PLACEMENT OF THE EXPANSION GAP DO-35 HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units W Working Inverse Voltage 125 V IV I Average Rectified Current 200 mA O I DC Forward Current 500 mA F Recurrent Peak Forward Current 600 mA i f i Peak Forward Surge Current f(surge) Pulse width = 1.0 second 1.0 A Pulse width = 1.0 microsecond 4.0 A Storage Temperature Range -65 to +200 T °C stg T Operating Junction Temperature 175 C J ° *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units FDH/FDLL 300/A / 333 P Total Device Dissipation 500 mW D Derate above 25°C 3.33 mW/°C R Thermal Resistance, Junction to Ambient 300 C/W θ ° JA ã1997
