FDJ129P ,P-Channel -2.5Vgs Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FDL100N50F ,N-Channel UniFETTM FRFET?MOSFET 500V, 100A, 55m?ApplicationsThis device family is suitable for switching power converter appli-• Uninterruptible Po ..
FDLL300 ,High Conductance Low Leakage DiodeElectrical Characteristics TA = 25°C unless otherwise notedSymbol Parameter Test Conditions Mi ..
FDLl400 ,High Voltage General Purpose DiodeFDH400 / FDLL400FDH/FDLL 400COLOR BAND MARKINGDEVICE 1ST BAND 2ND BANDFDLL400 BROWN VIOLETLL-34DO-3 ..
FDLL400 ,High Voltage General Purpose DiodeFDH400 / FDLL400FDH/FDLL 400COLOR BAND MARKINGDEVICE 1ST BAND 2ND BANDFDLL400 BROWN VIOLETLL-34DO-3 ..
FDLL400 ,High Voltage General Purpose Diodeapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDJ129P
P-Channel -2.5Vgs Specified PowerTrench MOSFET
FDJ129P July 2004 FDJ129P P-Channel -2.5 Vgs Specified PowerTrench MOSFET General Description Features This P-Channel -2.5V specified MOSFET uses • –4.2 A, –20 V. R = 70 mΩ @ V = –4.5 V DS(ON) GS Fairchild’s advanced low voltage PowerTrench process. R = 120 mΩ @ V = –2.5 V DS(ON) GS It has been optimized for battery power management applications. • Low gate charge Applications • High performance trench technology for extremely • Battery management low R DS(ON) • Load switch • Compact industry standard SC75-6 surface mount package Bottom Drain G 4 3 S S 2 5 1 6 S S SC75-6 FLMP S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage ± 12 V GSS I Drain Current – Continuous (Note 1a) –4.2 A D – Pulsed –16 P Power Dissipation for Single Operation (Note 1a) 1.6 W D T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 77 °C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .A FDJ129P 7’’ 8mm 3000 units FDJ129P Rev F1 W) 2004
