FDJ127P ,P-Channel -1.8 Vgs Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FDJ128N ,N-Channel 2.5Vgs Specified PowerTrench MOSFETFeatures This N-Channel -2.5V specified MOSFET uses • 5.5 A, 20 V. R = 35 mΩ @ V = 4.5 V DS(ON) GSF ..
FDJ129 ,P-Channel -2.5 Vgs Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FDJ129 ,P-Channel -2.5 Vgs Specified PowerTrench MOSFETFeatures This P-Channel -2.5V specified MOSFET uses • –4.2 A, –20 V. R = 70 mΩ @ V = –4.5 V DS(ON) ..
FDJ129P ,P-Channel -2.5Vgs Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FDL100N50F ,N-Channel UniFETTM FRFET?MOSFET 500V, 100A, 55m?ApplicationsThis device family is suitable for switching power converter appli-• Uninterruptible Po ..
FP50R12KE3 , Elektrische Eigenschaften / Electrical properties
FP50R12KT3 , IGBT-modules
FP50R12KT4 , EconoPIM2 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FDJ127P
P-Channel -1.8 Vgs Specified PowerTrench MOSFET
FDJ127P July 2004 FDJ127P P-Channel -1.8 Vgs Specified PowerTrench MOSFET General Description Features This P-Channel -1.8V specified MOSFET uses • –4.1 A, –20 V. R = 60 mΩ @ V = –4.5 V DS(ON) GS Fairchild’s advanced low voltage Power Trench R = 85 mΩ @ V = –2.5 V DS(ON) GS process. It has been optimized for battery power management applications. R = 133 mΩ @ V = –1.8 V DS(ON) GS • Low gate charge Applications • High performance trench technology for extremely • Battery management low R DS(ON) • Load switch • Compact industry standard SC75-6 surface mount package Bottom Drain G S 4 3 S 2 5 1 6 S S SC75-6 FLMP S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ± 8 I Drain Current – Continuous (Note 1) –4.1 A D – Pulsed –16 P Power Dissipation (Note 1) 1.6 W D T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1) 77 R °C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .C FDJ127P 7’’ 8mm 3000 units FDJ127P Rev B2 (W) 2004
