FDJ1032C ,20V Complementary PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Type M ..
FDJ127P ,P-Channel -1.8 Vgs Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FDJ128N ,N-Channel 2.5Vgs Specified PowerTrench MOSFETFeatures This N-Channel -2.5V specified MOSFET uses • 5.5 A, 20 V. R = 35 mΩ @ V = 4.5 V DS(ON) GSF ..
FDJ129 ,P-Channel -2.5 Vgs Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FDJ129 ,P-Channel -2.5 Vgs Specified PowerTrench MOSFETFeatures This P-Channel -2.5V specified MOSFET uses • –4.2 A, –20 V. R = 70 mΩ @ V = –4.5 V DS(ON) ..
FDJ129P ,P-Channel -2.5Vgs Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FP50R12KE3 , Elektrische Eigenschaften / Electrical properties
FP50R12KE3 , Elektrische Eigenschaften / Electrical properties
FP50R12KT3 , IGBT-modules
FP50R12KT4 , EconoPIM2 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FDJ1032C
20V Complementary PowerTrench MOSFET
FDJ1032C November 2004 FDJ1032C Complementary PowerTrench MOSFET General Description Features These N & P-Channel MOSFETs are produced using • Q1 –2.8 A, –20 V. R = 160 mΩ @ V = –4.5 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench R = 230 mΩ @ V = –2.5 V DS(ON) GS process that has been especially tailored to minimize on-state resistance and yet maintain superior switching R = 390 mΩ @ V = –1.8 V DS(ON) GS performance. • Q2 3.2 A, 20 V. R = 90 mΩ @ V = 4.5 V DS(ON) GS These devices are well suited for low voltage and R = 130 mΩ @ V = 2.5 V. DS(ON) GS battery powered applications where low in-line power loss and fast switching are required. • Low gate charge • High performance trench technology for extremely Applications • DC/DC converter low R . DS(ON) • Load switch • FLMP SC75 package: Enhanced thermal performance • Motor Driving in industry-standard package size S2 S2 Bo Bot tt to om m Dr Dra aiin n Co Con nt ta ac ct t S1 S1 Q2 (N) Q2 (N) G1 G1 4 4 3 3 2 2 5 5 G2 G2 1 1 S2 S2 6 6 S1 S1 Q1 (P Q1 (P) ) Bo Bot tt to om m Dr Dra aiin n Co Con nt ta ac ct t SC75 DUAL FLMP Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain-Source Voltage –20 20 V DSS V Gate-Source Voltage ±8 ±12 V GSS I Drain Current - Continuous (Note 1a) –2.8 3.2 A D - Pulsed –12 12 P Power Dissipation for single Operation (Note 1a) 1.5 W D (Note 1b) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 80 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1a) 5 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .H FDJ1032C 7’’ 8mm 3000 units FDJ1032C Rev B(W) 2004
