FDI3652 ,N-Channel PowerTrench ?MOSFET 100V, 61A, 16mOhmApplications•r = 14mΩ (Typ.), V = 10V, I = 61A DC/DC Converters and Off-line UPSDS(ON) GS DQ (to ..
FDJ1027P ,-20V P-Channel 1.8V Specified PowerTrench MOSFETApplications capability • Battery management/Charger Application • High performance trench technol ..
FDJ1027P ,-20V P-Channel 1.8V Specified PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDJ1027P ,-20V P-Channel 1.8V Specified PowerTrench MOSFETFeatures This dual P-Channel 1.8V specified MOSFET uses • –2.8 A, –20 V R = 160 mΩ @ V = –4.5 V ..
FDJ1028N ,20V N-Channel 2.5Vgs Specified PowerTrench MOSFETFeatures This dual N-Channel 2.5V specified MOSFET uses • 3.2 A, 20 V. R = 90 mΩ @ V = 4.5 V DS(ON) ..
FDJ1028N ,20V N-Channel 2.5Vgs Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FP50R12KE3 , Elektrische Eigenschaften / Electrical properties
FP50R12KE3 , Elektrische Eigenschaften / Electrical properties
FP50R12KT3 , IGBT-modules
FP50R12KT4 , EconoPIM2 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FDI3652
N-Channel PowerTrench ?MOSFET 100V, 61A, 16mOhm
FDB3652 / FDP3652 / FDI3652 July 2002 FDB3652 / FDP3652 / FDI3652 ® N-Channel PowerTrench MOSFET 100V, 61A, 16mΩ Features Applications •r = 14mΩ (Typ.), V = 10V, I = 61A DC/DC Converters and Off-line UPS DS(ON) GS D Q (tot) = 41nC (Typ.), V = 10VDistributed Power Architectures and VRMs g GS Low Miller ChargePrimary Switch for 24V and 48V Systems Low Qrr Body DiodeHigh Voltage Synchronous Rectifier UIS Capability (Single Pulse and Repetitive Pulse)Direct Injection / Diesel Injection Systems Qualified to AEC Q10142V Automotive Load Control Electronic Valve Train Systems Formerly developmental type 82769 SOURCE DRAIN DRAIN (FLANGE) D GATE GATE SOURCE DRAIN G SOURCE GATE DRAIN TO-263AB TO-220AB TO-262AA S (FLANGE) DRAIN FDB SERIES FDP SERIES FDI SERIES (FLANGE) MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 61 A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 100 C, V = 10V) 43 A D C GS o o Continuous (T = 25 C, V = 10V) with R = 43 C/W) 9 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 182 mJ AS Power dissipation 150 W P D o o Derate above 25C1.0W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-220, TO-263, TO-262 1.0 C/W θJC o R Thermal Resistance Junction to Ambient TO-220, TO-263, TO-262 (Note 2) 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 FDB3652 / FDP3652 / FDI3652 Rev. A1
