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FDH45N50F
N-Channel UniFETTM FRFET?MOSFET 500V, 45A, 120m?
TM ® FDH45N50F_F133 N-Channel UniFET FRFET MOSFET April 2013 FDH45N50F_F133 TM ® N-Channel UniFET FRFET MOSFET 500 V, 45 A, 120 m Features Description TM ® •R = 120 m (Max.) @ V = 10 V, I = 22.5 A UniFET MOSFET is Fairchild Semiconductor ’s high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 105 nC) This MOSFET is tailored to reduce on-state resistance, and to •Low C (Typ. 62 pF) rss provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery perfor- • 100% Avalanche Tested ® mance of UniFET FRFET MOSFET has been enhanced by • Improved dv/dt Capability lifetime control. Its t is less than 100nsec and the reverse dv/dt rr immunity is 15V/ns while normal planar MOSFETs have over Applications 200nsec and 4.5V/nsec respectively. Therefore, it can remove • Lighting additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode • Uninterruptible Power Supply is significant. This device family is suitable for switching power • AC-DC Power Supply converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp bal- lasts D G G D S TO-247 S Absolute Maximum Ratings Symbol Parameter FDH45N50F_F133 Unit V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25C) 45 A D C - Continuous (T = 100C) 28.4 A C (Note 1) I Drain Current - Pulsed 180 A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 1868 mJ AS I Avalanche Current (Note 1) 45 A AR E Repetitive Avalanche Energy (Note 1) 62.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns P Power Dissipation (T = 25C) 625 W D C - Derate above 25C 5 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDH45N50F_F133 Unit R Thermal Resistance, Junction-to-Case, Max. 0.2 JC C/W R Thermal Resistance, Junction-to-Ambient, Max. 40 JA ©2008 1 FDH45N50F_F133 Rev. C0
