FDH44N50 ,44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFETFeatures Low Gate Charge Q results in Simple DriveSwitch Mode Power Supplies(SMPS), such as gRequi ..
FDH45N50F ,N-Channel UniFETTM FRFET?MOSFET 500V, 45A, 120m?applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and elec ..
FDH50N50 ,500V N-Channel UniFETFDH50N50 / FDA50N50 500V N-Channel MOSFETTMUniFETFDH50N50 / FDA50N50 500V N-Channel MOSFET
FDH600 ,High Conductance Ultra Fast DiodeFDH600 / FDLL600Discrete POWER & SignalTechnologiesFDH / FDLL 600COLOR BAND MARKING DEVICE 1ST BAN ..
FDI038AN06A0 ,N-Channel PowerTrench ?MOSFET 60V, 80A, 3.8mOhmApplications•r = 3.5mΩ (Typ.), V = 10V, I = 80A Motor / Body Load ControlDS(ON) GS DQ (tot) = 95 ..
FDI3632 ,N-Channel UltraFET ?Trench MOSFET 100V, 80A, 9mOhmApplicationsr = 7.5mΩ (Typ.), V = 10V, I = 80A DC/DC converters and Off-Line UPSDS(ON) GS DQ (t ..
FP50R12KE3 , Elektrische Eigenschaften / Electrical properties
FP50R12KE3 , Elektrische Eigenschaften / Electrical properties
FP50R12KT3 , IGBT-modules
FP50R12KT4 , EconoPIM2 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FDH44N50
44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET
FDH44N50 August 2002 FDH44N50 44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET Applications Features Low Gate Charge Q results in Simple Drive Switch Mode Power Supplies(SMPS), such as g Requirement • PFC Boost Improved Gate, Avalanche and High Reapplied dv/dtTwo-Switch Forward Converter Ruggedness Single Switch Forward Converter Reduced r DS(ON)Flyback Converter Buck ConverterReduced Miller Capacitance and Low Input Capacitance High Speed Switching Improved Switching Speed with Low EMI 175°C Rated Junction Temperature Package Symbol JEDEC TO-247 SOURCE D DRAIN GATE G DRAIN (FLANGE) S o Absolute Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 500 V DSS V Gate to Source Voltage ±30 V GS Drain Current o Continuous (T = 25 C, V = 10V) 44 A C GS I D o Continuous (T = 100 C, V = 10V) 32 A C GS 1 Pulsed 176 A Power dissipation 750 W P D o o Derate above 25C5W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG o Soldering Temperature for 10 seconds 300 (1.6mm from case) C Mounting Torque, 8-32 or M3 Screw 10ibf*in (1.1N*m) Thermal Characteristics o R Thermal Resistance Junction to Case 0.2 C/W θJC o R Thermal Resistance Case to Sink, Flat, Greased Surface 0.24 C/W θCS o R Thermal Resistance Junction to Ambient 40 C/W θJA ©2002 FDH44N50 Rev. A4, August 2002
