FDH3632 ,100V N-Channel PowerTrench MOSFETApplicationsr = 7.5mΩ (Typ.), V = 10V, I = 80A DC/DC converters and Off-Line UPSDS(ON) GS DQ (t ..
FDH3632 ,100V N-Channel PowerTrench MOSFETFDB3632 / FDP3632 / FDI3632 / FDH3632November 2004FDB3632 / FDP3632 / FDI3632 / FDH3632®N-Channel P ..
FDH400 ,High Voltage General Purpose DiodeFDH400 / FDLL400FDH/FDLL 400COLOR BAND MARKINGDEVICE 1ST BAND 2ND BANDFDLL400 BROWN VIOLETLL-34DO-3 ..
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FDH44N50 ,44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFETFeatures Low Gate Charge Q results in Simple DriveSwitch Mode Power Supplies(SMPS), such as gRequi ..
FP50R12KE3 , Elektrische Eigenschaften / Electrical properties
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FP50R12KT3 , IGBT-modules
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FDH3632
100V N-Channel PowerTrench MOSFET
FDB3632 / FDP3632 / FDI3632 / FDH3632 November 2004 FDB3632 / FDP3632 / FDI3632 / FDH3632 ® N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications r = 7.5mΩ (Typ.), V = 10V, I = 80A DC/DC converters and Off-Line UPS DS(ON) GS D Q (tot) = 84nC (Typ.), V = 10V g GS Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Q Body Diode RR High Voltage Synchronous Rectifier UIS Capability (Single Pulse and Repetitive Pulse) Direct Injection / Diesel Injection Systems Qualified to AEC Q101 42V Automotive Load Control Electronic Valve Train Systems D S S D D G G DRAIN DRAIN (FLANGE) (FLANGE) S G D DRAIN G G S DRAIN (FLANGE) TO-220AB TO-263AB TO-262AB TO-247 S FDP SERIES FDB SERIES FDI SERIES FDH SERIES MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 80 A Continuous (T < 111 C, V = 10V) C GS I D o o Continuous (T = 25 C, V = 10V, R = 43 C/W) 12 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 393 mJ AS Power dissipation 310 W P D o o Derate above 25C2.07W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics Thermal Resistance Junction to Case TO-220, TO-263, TO-262, o R 0.48 C/W θJC TO-247 o R Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2) 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W θJA o R Thermal Resistance Junction to Ambient TO-247 (Note 2) 30 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2004 FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C1
