FDH300 ,High Conductance Low Leakage DiodeElectrical Characteristics TA = 25°C unless otherwise notedSymbol Parameter Test Conditions Mi ..
FDH300A ,High Conductance Low Leakage DiodeElectrical Characteristics TA = 25°C unless otherwise notedSymbol Parameter Test Conditions Mi ..
FDH333 ,High Conductance Low Leakage DiodeElectrical Characteristics TA = 25°C unless otherwise notedSymbol Parameter Test Conditions Mi ..
FDH3632 ,100V N-Channel PowerTrench MOSFETApplicationsr = 7.5mΩ (Typ.), V = 10V, I = 80A DC/DC converters and Off-Line UPSDS(ON) GS DQ (t ..
FDH3632 ,100V N-Channel PowerTrench MOSFETFDB3632 / FDP3632 / FDI3632 / FDH3632November 2004FDB3632 / FDP3632 / FDI3632 / FDH3632®N-Channel P ..
FDH400 ,High Voltage General Purpose DiodeFDH400 / FDLL400FDH/FDLL 400COLOR BAND MARKINGDEVICE 1ST BAND 2ND BANDFDLL400 BROWN VIOLETLL-34DO-3 ..
FP50R12KE3 , Elektrische Eigenschaften / Electrical properties
FP50R12KE3 , Elektrische Eigenschaften / Electrical properties
FP50R12KT3 , IGBT-modules
FP50R12KT4 , EconoPIM2 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FDH300
High Conductance Low Leakage Diode
FDH300/A / FDLL300/A / FDH333 / FDLL333 FDH/FDLL 300/A / 333 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL300 BROWN GREEN FDLL300A BROWN YELLOW FDLL333 BROWN BLUE LL-34 THE PLACEMENT OF THE EXPANSION GAP DO-35 HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units W Working Inverse Voltage 125 V IV I Average Rectified Current 200 mA O I DC Forward Current 500 mA F Recurrent Peak Forward Current 600 mA i f i Peak Forward Surge Current f(surge) Pulse width = 1.0 second 1.0 A Pulse width = 1.0 microsecond 4.0 A Storage Temperature Range -65 to +200 T °C stg T Operating Junction Temperature 175 C J ° *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units FDH/FDLL 300/A / 333 P Total Device Dissipation 500 mW D Derate above 25°C 3.33 mW/°C R Thermal Resistance, Junction to Ambient 300 C/W θ ° JA ã1997
