FDH15N50 ,15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFETFeatures Low Gate Charge Q results in Simple DriveSwitch Mode Power Supplies(SMPS), such as gRequi ..
FDH27N50 ,27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFETFeatures Low Gate Charge Qg results in Simple Drive Require-Switch Mode Power Supplies(SMPS), such ..
FDH300 ,High Conductance Low Leakage DiodeElectrical Characteristics TA = 25°C unless otherwise notedSymbol Parameter Test Conditions Mi ..
FDH300A ,High Conductance Low Leakage DiodeElectrical Characteristics TA = 25°C unless otherwise notedSymbol Parameter Test Conditions Mi ..
FDH333 ,High Conductance Low Leakage DiodeElectrical Characteristics TA = 25°C unless otherwise notedSymbol Parameter Test Conditions Mi ..
FDH3632 ,100V N-Channel PowerTrench MOSFETApplicationsr = 7.5mΩ (Typ.), V = 10V, I = 80A DC/DC converters and Off-Line UPSDS(ON) GS DQ (t ..
FP50R12KE3 , Elektrische Eigenschaften / Electrical properties
FP50R12KE3 , Elektrische Eigenschaften / Electrical properties
FP50R12KT3 , IGBT-modules
FP50R12KT4 , EconoPIM2 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FDH15N50
15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET
FDH15N50 / FDP15N50 August 2002 FDH15N50 / FDP15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features Low Gate Charge Q results in Simple Drive Switch Mode Power Supplies(SMPS), such as g Requirement • PFC Boost Improved Gate, Avalanche and High Reapplied dv/dtTwo-Switch Forward Converter Ruggedness Single Switch Forward Converter Reduced r DS(ON)Flyback Converter Buck ConverterReduced Miller Capacitance and Low Input Capacitance High Speed Switching Improved Switching Speed with Low EMI 175°C Rated Junction Temperature Package Symbol JEDEC TO-247 JEDEC TO-220 D SOURCE DRAIN GATE G DRAIN (BOTTOM) DRAIN S (FLANGE) SOURCE DRAIN GATE o Absolute Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 500 V DSS V Gate to Source Voltage ±30 V GS Drain Current o 15 A Continuous (T = 25 C, V = 10V) C GS I D o Continuous (T = 100 C, V = 10V) 11 A C GS 1 Pulsed 60 A Power dissipation 300 W P D o o Derate above 25 C 2 W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG o Soldering Temperature for 10 seconds 300 (1.6mm from case) C Thermal Characteristics o R Thermal Resistance Junction to Case 0.50 C/W θJC o R Thermal Resistance Case to Sink, Flat, Greased Surface 0.24 C/W θCS o R Thermal Resistance Junction to Ambient (TO-247) 40 C/W θJA o R Thermal Resistance Junction to Ambient (TO-220) 62 C/W θJA ©2002 FDH15N50 / FDP15N50 RevC, August 2002
