FDH047AN08A0 ,N-Channel PowerTrench MOSFETApplications•r = 4.0mΩ (Typ.), V = 10V, I = 80A 42V Automotive Load ControlDS(ON) GS DQ (tot) = ..
FDH15N50 ,15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFETFeatures Low Gate Charge Q results in Simple DriveSwitch Mode Power Supplies(SMPS), such as gRequi ..
FDH27N50 ,27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFETFeatures Low Gate Charge Qg results in Simple Drive Require-Switch Mode Power Supplies(SMPS), such ..
FDH300 ,High Conductance Low Leakage DiodeElectrical Characteristics TA = 25°C unless otherwise notedSymbol Parameter Test Conditions Mi ..
FDH300A ,High Conductance Low Leakage DiodeElectrical Characteristics TA = 25°C unless otherwise notedSymbol Parameter Test Conditions Mi ..
FDH333 ,High Conductance Low Leakage DiodeElectrical Characteristics TA = 25°C unless otherwise notedSymbol Parameter Test Conditions Mi ..
FP3-R10-R , 155°C maximum total temperature operation Low profile high current inductors
FP40R12KE3 , EconoPIM2 module with trench/fieldstop IGBT3 and Emitter Controlled 3 diode
FP40R12KE3G , IGBT-Modules
FP40R12KE3G , IGBT-Modules
FP40R12KT3 , IGBT-inverter
FP40R12KT3G , IGBT-modules
FDH047AN08A0
N-Channel PowerTrench MOSFET
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 June 2004 FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 ® N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications •r = 4.0mΩ (Typ.), V = 10V, I = 80A 42V Automotive Load Control DS(ON) GS D Q (tot) = 92nC (Typ.), V = 10V Starter / Alternator Systems g GS Low Miller Charge Electronic Power Steering Systems Low Q Body Diode Electronic Valve Train Systems RR UIS Capability (Single Pulse and Repetitive Pulse) DC-DC converters and Off-line UPS Qualified to AEC Q101 Distributed Power Architectures and VRMs Primary Switch for 24V and 48V systems Formerly developmental type 82684 SOURCE DRAIN SOURCE D DRAIN GATE DRAIN SOURCE (FLANGE) GATE DRAIN DRAIN G GATE (FLANGE) DRAIN TO-220AB TO-262AB S (FLANGE) TO-247 FDP SERIES FDI SERIES FDH SERIES MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 75 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 80 A Continuous (T < 144 C, V = 10V) C GS I D o o Continuous (T = 25 C, V = 10V, with R = 62 C/W) 15 A C GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 475 mJ AS Power dissipation 310 W P D o o Derate above 25C2.0W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-220, TO-262, TO-247 0.48 C/W θJC o R Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2) 62 C/W θJA o R Thermal Resistance Junction to Ambient TO-247 (Note 2) 30 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2004 FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C
