FDH038AN08A1 ,N-Channel PowerTrench; MOSFET, 75V, 80A, 3.8 MOhm TO-247 PackageApplications•r = 3.5mΩ (Typ.), V = 10V, I = 80A 42V Automotive Load ControlDS(ON) GS DQ (tot) = ..
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FDH038AN08A1
N-Channel PowerTrench; MOSFET, 75V, 80A, 3.8 MOhm TO-247 Package
FDH038AN08A1 February 2003 FDH038AN08A1 ® N-Channel PowerTrench MOSFET 75V, 80A, 3.8mΩ Features Applications •r = 3.5mΩ (Typ.), V = 10V, I = 80A 42V Automotive Load Control DS(ON) GS D Q (tot) = 125nC (Typ.), V = 10VStarter / Alternator Systems g GS Internal Gate Resistor, Rg = 20 Ω (Typ.)Electronic Power Steering Systems Low Miller ChargeElectronic Valve Train Systems Low Q Body DiodeDC-DC converters and Off-line UPS RR UIS Capability (Single Pulse and Repetitive Pulse)Distributed Power Architectures and VRMs Qualified to AEC Q101Primary Switch for 24V and 48V systems Formerly developmental type 82690 D SOURCE DRAIN GATE G TO-247 S MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 75 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 80 A Continuous (T < 158 C, V = 10V) C GS I D o o Continuous (T = 25 C, V = 10V, with R = 30 C/W) 22 A A GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 1.17 J AS Power dissipation 450 W P D o o Derate above 25C3.0W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-247 0.33 C/W θJC o R Thermal Resistance Junction to Ambient TO-247 30 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2003 FDH038AN08A1 Rev A
